Strong current-polarization and differential negative resistance in FeN3 –embedded armchair graphene nanoribbons
Ying-Chao Wu, Jia-Rui Rao, Xiao-Fei Li*
Ferromagnetic materials have important applications in spintronics。In this work, we investigated the electronic structure and transport properties FeN3 –embedded armchair graphene nanoribbons from first-principles calculations. The results indicate that the FeN3 induces room-temperature stable ferromagnetic (FM) ground states in the system. While only the armchair graphene nanoribbons possess a significant spin-dependent differential negative resistance (NDR) and a striking current polarization (nearly 100%) behaviors, due to that the FeN3 introduces two isolated and well-delocalized spin-down states near the Fermi level, which determine the transport properties of the result system. Our findings suggest that transition-metal-nitrogen-carbon(TM-N-C) materials can possess (FM) ground state at room-temperature and thus can be used for building spin devices in spintronics.
Keywords：TM-N-C, Ferromagnetic materials, Current polarization, Differential negative resistance