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Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Di erent Pyrolysis Temperatures
Bin Wen,Chao-qian Liu,Nan Wang,Hua-lin Wang,Shi-min Liu,Wei-wei Jiang,Wan-yu Ding,Wei-dong Fei,Wei-ping Chai
Author NameAffiliationE-mail
Bin Wen Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Chao-qian Liu Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China cqliu@djtu.edu.cn 
Nan Wang Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Hua-lin Wang Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Shi-min Liu Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Wei-wei Jiang Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Wan-yu Ding Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Wei-dong Fei School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;School of Mechanical Engineering, Qinghai University, Xining 810016, China wdfei@hit.edu.cn 
Wei-ping Chai Engineering Research Center of Optoelectronic Materials & Devices, School of Materials Science and Engineering, Dalian Jiaotong University, Dalian 116028, China  
Abstract:
Boron-doped zinc oxide transparent (BZO) films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.
Key words:  Transparent conduction oxide  Thin film  Boron-doped ZnO  Pyrolysis temperature  Sol-gel
FundProject:This work was supported by the National Natural Science Foundation of China (No.51302024, No.51002018 and No.51472039), the Program for Liaoning Excellent Talents in University (No.LJQ2012038), the Higher Specialized Research Fund for the Doctoral Program (No.20122124110004), the Project of Education Department of Liaoning Province (No.L2013179), the Project of Open Research Foundation of State Key Laboratory of Advanced Technology for Float Glass (No.KF1301-01), the Dalian Science and Technology Plan Project (No.2011A15GX025), the Dalian Science and Technology Plan Project (No.2010J21DW008), and the Qinghai Province Science and Technology Project (No.2012-Z-701).
热解温度对溶胶-凝胶法制备B掺杂ZnO薄膜晶化行为及性能的影响
文斌,刘超前,王楠,王华林,刘世民,姜薇薇,丁万昱,费维栋,柴卫平
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DOI:10.1063/1674-0068/29/cjcp1506116
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