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The Electronic Structures and Optical Properties of Ga Doped Two-dimensional Indium Nitride
Duan ManYi
Author NameAffiliationE-mail
Duan ManYi 四川师范大学物理与电子工程学院 dmy226@163.com 
Abstract:
Electronic structures and optical properties of two-dimensional (2D) InxGa1-xN are studied by employing Heyd Scuseria Ernzerh (HSE) method based on the first-principles. The band structure and density of states (DOS) of 2D InxGa1-xN are calculated, and the band gap ranges from 1.8 to 3.8 eV as the ratio x changes, illustrating the potential for the tunability of band gap values via Ga doped. We also have investigated optical properties of 2D InxGa1-xN such as dielectric function, refractive index and absorption coefficient, the main peak of dielectric function spectrum and the absorption edge are found to have a remarkable blue-shift as the concentration of Ga increases. Furthermore, the optical properties of 2D InxGa1-xN are analyzed based on the band structures and DOS analysis. Such unique optical properties have profound application in nanoelectronics and optical devices.
Key words:  electronic structure, optical properties, two-dimensional InxGa1-xN, Heyd Scuseria Ernzerh method
FundProject:
The Electronic Structures and Optical Properties of Ga Doped Two-dimensional Indium Nitride
段满益
摘要:
Electronic structures and optical properties of two-dimensional (2D) InxGa1-xN are studied by employing Heyd Scuseria Ernzerh (HSE) method based on the first-principles. The band structure and density of states (DOS) of 2D InxGa1-xN are calculated, and the band gap ranges from 1.8 to 3.8 eV as the ratio x changes, illustrating the potential for the tunability of band gap values via Ga doped. We also have investigated optical properties of 2D InxGa1-xN such as dielectric function, refractive index and absorption coefficient, the main peak of dielectric function spectrum and the absorption edge are found to have a remarkable blue-shift as the concentration of Ga increases. Furthermore, the optical properties of 2D InxGa1-xN are analyzed based on the band structures and DOS analysis. Such unique optical properties have profound application in nanoelectronics and optical devices.
关键词:  electronic structure, optical properties, two-dimensional InxGa1-xN, Heyd Scuseria Ernzerh method
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