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The Influence of PMMA Addition on Resistive Switching Performance of P3HT/P(VDF-TrFE) Blend Films
Gawdon
Author NameAffiliationE-mail
Gawdon Fudan University gdzhu@fudan.edu.cn 
Abstract:
Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation occurred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, PMMA was introduced as additive into P3HT/P(VDF-TrFE) semiconducting/ferroelectric blend films. Our work indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tends to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.
Key words:  resistive switching, ferroelectric/semiconducting blend films, spin coating, phase separation
FundProject:
The Influence of PMMA Addition on Resistive Switching Performance of P3HT/P(VDF-TrFE) Blend Films
朱国栋
摘要:
Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation occurred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, PMMA was introduced as additive into P3HT/P(VDF-TrFE) semiconducting/ferroelectric blend films. Our work indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tends to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.
关键词:  resistive switching, ferroelectric/semiconducting blend films, spin coating, phase separation
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