Abstract:
Nano-CdIn
2O
4 powders were prepared by chemical coprecipitation and solid state reaction method. The effects of preparation condition on the phase constituents of material were investigated. The results demonstrated that nano-CdIn
2O
4 can be obtained under the condition that at pH=7~8, the starting molar ratio Cd/In is 1.3/2 and the sintering temperature is higher than 500 ℃. The size of grain sintered at 800 ℃ for 4h is only 26nm and the grain growth activiation is about 26.8kJ/mol. The conductivity of CdIn
2O
4 was studied, the results revealed that the conductance of CdIn
2O
4 was influenced by atmosphere. The carrier is electron ionized from oxygen vacancies. In air, it was affected by the amount and state of absorbed oxygen on the surface of CdIn
2O
4 powder. While increasing temperature, the conductance of CdIn
2O
4 based sensor increases with increasing temperature from room temperature to 150 ℃and decrease with increasing temperature from 150 to 500 ℃. But in Ar, it exhibits somewhat metal conductivity, because the electron concentration is high and the mobility of electron decrease with increasing temperature. The investigation of CdIn
2O
4 gas-sensing properties demonstrated that CdIn
2O
4 based sensors have higher sensitivity and good selectivity to acetone.