Abstract: The porous silicon （PS） samples were prepared by anodic etching method, and the Er³⁺, In³⁺ were implanted into the PS samples by plating method. The results show that the implantation of such ions improves greatly the intensity of photoluminescence （PL） of the PS samples and makes the PL peak slightly blue-shift. With the increase of the plating time, the intensity of the PL increases continuously, but it has a saturation property to the plating time.