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    He Tianjing, Wang Pong, Zhang Xiaojing, Liu Fanchen. The Quantum Size Effects of AgBr Semiconductor Ultrafine Particles[J]. Chinese Journal of Chemical Physics , 1995, 8(1): 23-27.
    Citation: He Tianjing, Wang Pong, Zhang Xiaojing, Liu Fanchen. The Quantum Size Effects of AgBr Semiconductor Ultrafine Particles[J]. Chinese Journal of Chemical Physics , 1995, 8(1): 23-27.

    The Quantum Size Effects of AgBr Semiconductor Ultrafine Particles

    • The absorption and fluorescence bine shift as well as the oscillator strength enhancement of indirect gap semiconductor AgBr due to the confined spatial range of electron and hole were studied. The absorption peak of spin-orbit splitting band was observed at 284nm. The direct exition absorption and fluorescence of AgBr-Ag2S shifted from 310 and 34onm to 301 and 324nm respectively. A new fluorescence band at 850nm was measured.
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