Kong Xianggui, Lu Yichun, Er Shulin. The Electronic Characteristics of Heterojunction at CuPc/InP Interface and the Effect on Raman Scattering of CuPc LB Film[J]. Chinese Journal of Chemical Physics , 1995, 8(1): 41-45.
Citation:
Kong Xianggui, Lu Yichun, Er Shulin. The Electronic Characteristics of Heterojunction at CuPc/InP Interface and the Effect on Raman Scattering of CuPc LB Film[J]. Chinese Journal of Chemical Physics , 1995, 8(1): 41-45.
Kong Xianggui, Lu Yichun, Er Shulin. The Electronic Characteristics of Heterojunction at CuPc/InP Interface and the Effect on Raman Scattering of CuPc LB Film[J]. Chinese Journal of Chemical Physics , 1995, 8(1): 41-45.
Citation:
Kong Xianggui, Lu Yichun, Er Shulin. The Electronic Characteristics of Heterojunction at CuPc/InP Interface and the Effect on Raman Scattering of CuPc LB Film[J]. Chinese Journal of Chemical Physics , 1995, 8(1): 41-45.
The Electronic Characteristics of Heterojunction at CuPc/InP Interface and the Effect on Raman Scattering of CuPc LB Film
The characteristes or current density-voltage (J-V)and capacitance-voltage of Cupc/InP rectifying heterojuction energy barrier is first measured, and that the density of states at Cupc/InP interface effects on Raman scattering of Cupc LB film arc studied.