Studies of the Lattice Damage Caused by Ion Implantion into Al_xGa_1-xAs/GaAs, GaAs and the Effect of Relative Strength of Chemical Bond

The lattice damage produced in GaAs and Al_0.3Ga_0.7As/GaAs by 1 McV Si⁺ irradiation has been inveshgated by Rutherford backscattering/channeling （RBS/C） technique. The results show that the superlattices is more difficult to be damaged than GaAs in the same conditions, but the difference of damage degree between the two materials decreasc with the increasing of dose and substrate temperature, and the two materials are more difficult to be damaged as irradiation at substrate temperature 350℃ than at room temperature in the dose range from 5 × 10¹⁴ to 5 ×10¹⁶ ions/ cm². The degree and spatial extent or the damage in Al_0.3Ga_0.7As/ GaAs and GaAs arc explained by the relative bond strength obtained from molecular-orbital calculation of a group of atomic cluster simulated GaAs and Al_xGa_1-xAs/GaAs.