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Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures
Yu-lin Chen1, Ming-ling Li2, Yi-ming Wu2, Si-jia Li1, Yue Lin1, Dong-xue Du2, Huai-yi Ding1, Nan Pan1,2,3,4, Xiao-ping Wang1,2,3,4
1.Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China;2.Department of physics, University of Science and Technology of China, Hefei 230026, China;3.Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China;4.Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
Abstract:
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide interest not only for the fundamental research,but also for the application of next generation electronic and optoelectronic devices.Herein,we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures.Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2.Due to the interaction between the In2Se3 and MoSe2 layers,the heterostructure shows the quenching and red-shift of photoluminescence.Moreover,the current rectification behavior and photovoltaic effect can be observed from the heterostructure,which is attributed to the unique band structure alignment of the heterostructure,and is further confirmed by Kevin probe force microscopy measurement.The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
Key words:  van der Waals heterostructures  Chemical vapor deposition  In2Se3/MoSe2  Kevin probe force microscopy  n+-n junction
FundProject:This work was supported by the Ministry of Science and Technology of China (No.2016YFA0200602),the National Natural Science Foundation of China (No.21421063,No.11374274,No.11404314,No.11474260,No.11504364),the Chinese Academy of Sciences (XDB01020200),and the Fundamental Research Funds for the Central Universities (WK2030020027,WK2060190027).
两步化学气相沉积法制备In2Se3/MoSe2范德华尔斯异质结
陈玉林1, 李铭领2, 吴一鸣2, 李思嘉1, 林岳1, 杜冬雪2, 丁怀义1, 潘楠1,2,3,4, 王晓平1,2,3,4
1.中国科学技术大学, 合肥微尺度物质科学国家实验室, 合肥 230026;2.中国科学技术大学物理系, 合肥 230026;3.中国科学技术大学, 量子信息与量子科技前沿协同创新中心, 合肥 230026;4.中国科学技术大学, 中国科学院强耦合量子材料物理重点实验室, 合肥 230026
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DOI:10.1063/1674-0068/30/cjcp1704063
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