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Influence of Poly (methyl metacrylate) Addition on Resistive Switching Performance of P3HT/P(VDF-TrFE) Blend Films
Jun-hui Weng,Jing-hang Hu,Jian-chi Zhang,Yu-long Jiang,Guo-dong Zhu*
Author NameAffiliationE-mail
Jun-hui Weng Department of Materials Science, Fudan University, Shanghai 200433, China  
Jing-hang Hu Department of Materials Science, Fudan University, Shanghai 200433, China  
Jian-chi Zhang School of Microelectronics, Fudan University, Shanghai 200433, China  
Yu-long Jiang School of Microelectronics, Fudan University, Shanghai 200433, China  
Guo-dong Zhu* Department of Materials Science, Fudan University, Shanghai 200433, China gdzhu@fudan.edu.cn 
Abstract:
Organic semiconducting/ferroelectric blend films attracted much attention due to their elec-trical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc-curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly(methyl metacrylate) (PMMA) was introduced as additive into P3HT/P(VDF-TrFE) semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the con-figuration of three components was also put forward to well understand our experimental observations.
Key words:  Resistive switching  Ferroelectric/semiconducting blend film  Spin coating  Phase separation
FundProject:This work was supported by the STCSM (No.13NM1400600) and the National Natural Sci-ence Foundation of China (No.U1430106)
PMMA掺杂对P3HT/P(VDF-TrFE)复合薄膜阻变性能影响研究
翁军辉,胡静航,张剑驰,蒋玉龙,朱国栋*
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DOI:10.1063/1674-0068/30/cjcp1609177
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