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Effect of Screw-Dislocation on Electrical Properties of Spiral-Type Bi2Se3 Nanoplates
Yu-kun Wu,A-wei Zhuang,Chun-miao Ye,Jie Zeng,Nan Pan,Xiao-ping Wang
Author NameAffiliationE-mail
Yu-kun Wu Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China  
A-wei Zhuang Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Chun-miao Ye Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Jie Zeng Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Nan Pan Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Xiao-ping Wang Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China, Hefei 230026, China xpwang@ustc.edu.cn 
Abstract:
We systematically investigated the electrical properties of spiral-type and smooth Bi2Se3 nanoplates through field effect transistor and conductive atomic force microscopy (CAFM) measurement. It is observed that both nanoplates possess high conductivity and show metallic-like behavior. Compared to the smooth nanoplate, the spiral-type one exhibits the higher carrier concentration and lower mobility. CAFM characterization reveals that the conductance at the screw-dislocation edge is even higher than that on the terrace, implying that the dislocation can supply excess carriers to compensate the low mobility and achieve high conductivity. The unique structure and electrical properties make the spiral-type Bi2Se3 nanoplates a good candidate for catalysts and gas sensors.
Key words:  Bi2Se3 nanoplates  Screw-dislocation  Electrical properties  Field effect transistor  Conductive atomic force microscopy
FundProject:
螺旋位错对螺旋型硒化铋纳米片电学特性的影响
吴昱昆,庄阿伟,叶春苗,曾杰,潘楠,王晓平
摘要:
利用场效应晶体管和导电原子力显微术,系统研究了螺旋型和平面型硒化铋纳米片的电学特性.结果显示,两种纳米片均体现出高的电导率及类金属导电特性.与平面型样品相比,有更高的载流子浓度和更低的迁移率.导电原子力显微术表征表明,螺旋型纳米片中的螺旋位错边缘相比平台有更高的电导,反映出螺旋位错可以提供更多的载流子.补偿了样品的低迁移率特性,提升了样品的电导率.
关键词:  硒化铋纳米片  螺旋位错  电学特性  场效应管  导电原子力显微术
DOI:10.1063/1674-0068/29/cjcp1605107
分类号: