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Epitaxial Growth and Thermoelectric Measurement of Bi2Te3/Sb Superlattice Nanowires
Liang Li1, Si-chao Xu1, Guang-hai Li1,2
1.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China;2.School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China
Abstract:
Superlattice nanowires are expected to show further enhanced thermoelectric performance compared with conventional nanowires or superlattice thin films. We report the epitaxial growth of high density Bi2Te3/Sb superlattice nanowire arrays with a very small bilayer thickness by pulse electrodeposition. Transmission electron microscopy, selected area electron diffraction and high resolution transmission electron microscopy were used to characterize the superlattice nanowires, and Harman technique was employed to measure the figure of merit (ZT) of the superlattice nanowire array in high vacuum condition. The superlattice nanowire arrays exhibit a ZT of 0.15 at 330 K, and a temperature difference of about 6.6 K can be realized across the nanowire arrays.
Key words:  Bi2Te3  Superlattice nanowires  Electrodeposition  Thermoelectric  Harman technique
FundProject:This work was supported by the National Natural Science Foundation of China (No.11174285).
Bi2Te3/Sb超晶格纳米线的外延生长和热电测量
李亮1, 许思超1, 李广海1,2
1.中国科学院固体物理研究所, 中国科学院材料物理重点实验室, 安徽省纳米材料与技术重点实验室, 合肥 230031;2.中国科学技术大学化学与材料科学学院, 合肥 230026
摘要:
通过脉冲电沉积,外延生长出小单元长度的Bi2Te3/Sb超晶格纳米线.借助哈曼方法,测量了超晶格纳米线阵列的热电性能,330 K时的ZT值可达0.15.研究了Bi2Te3/Sb超晶格纳米线阵列器件的制冷或者加热能力,发现器件的上下表面的最大温差可以达到6.6 K.
关键词:  Bi2Te3  超晶格纳米线  电沉积  热电  哈曼技术
DOI:10.1063/1674-0068/29/cjcp1509194
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