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Ultraviolet Optical Properties and Structural Characteristics of Radio Frequency-Deposited HfO2 Thin Films
Cun-zhi Sun,Rong-dun Hong*,Xia-ping Chen,Jia-fa Cai,Zheng-yun Wu
Author NameAffiliationE-mail
Cun-zhi Sun Department of Physics, Xiamen University, Xiamen 361005, ChinaJiujiang Research Institute of Xiamen University, Jiujiang 332000, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China  
Rong-dun Hong* Department of Physics, Xiamen University, Xiamen 361005, ChinaJiujiang Research Institute of Xiamen University, Jiujiang 332000, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China rdhong@xmu.edu.cn 
Xia-ping Chen Department of Physics, Xiamen University, Xiamen 361005, ChinaJiujiang Research Institute of Xiamen University, Jiujiang 332000, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China  
Jia-fa Cai Department of Physics, Xiamen University, Xiamen 361005, ChinaJiujiang Research Institute of Xiamen University, Jiujiang 332000, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China  
Zheng-yun Wu Department of Physics, Xiamen University, Xiamen 361005, ChinaJiujiang Research Institute of Xiamen University, Jiujiang 332000, ChinaFujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China  
Abstract:
Hafnium oxide (HfO2) thin films were deposited on quartz substrate by radio frequency magnetron sputtering with power from 160 W to 240 W. The optical and microstructural properties of samples before and after annealing were characterized by XRD, XPS, UV-VISNIR spectrophotometer and ellipsometer. The results show optical transmittances with low absorption in wavelength range above λ=200 nm for all samples. The appropriate annealing can transfer the amorphous state of as-deposited films to the crystal film, contribute to the growth of nanocrystalline and compressive stress, optimize the stoichiometry of the film and systematically improve film density and the refractive index. In consideration of the stability of proper refractive index (>2) and high optical transmittance in UV band, HfO2 films deposited approximately at 220 W can be used in UV anti-reflection system.
Key words:  Thin films, Optical materials, Sputtering, X-ray diffraction
FundProject:
对基于磁控溅射方法沉积的HfO2薄膜的紫外光学特性及薄膜结构的研究
孙存志,洪荣墩*,陈夏平,蔡加法,吴正云
摘要:
本文基于磁控溅射方法,功率从160 W增加到240 W,在石英衬底上沉积氧化铪薄膜(HfO2),并对沉积后的薄膜进行退火处理. 利用X射线衍射谱、X射线光电子能谱、紫外-可见-近红外透射谱和椭圆偏振仪对HfO2薄膜进行研究,对比了退火前后HfO2薄膜的光学特性及薄膜结构的变化. 实验结果显示,HfO2薄膜对波长大于200 nm的入射光具有很低的吸收系数. 优化退火温度和时间,可以将沉积后的HfO2薄膜从非晶态转化成多晶态. 退火有助于结晶生成和内应力的增加,同时退火可以优化薄膜的化学计量比,提升薄膜的光学密度及折射率. 对功率在220 W左右沉积的薄膜进行退火,获得的HfO2薄膜具有较高并且稳定的光学折射率(>2)和紫外光透射率,可在紫外波段减反膜系统中得到应用.
关键词:  薄膜,光学材料,溅射,X射线衍射
DOI:10.1063/1674-0068/31/cjcp1806140
分类号: