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Two-dimensional VDW Crystal SnP3 with High Carrier Mobility and Extraordinary Sunlight Absorbance
Erjun Kan
Author NameAffiliationE-mail
Erjun Kan Nanjing University of Science and Technology ekan@njust.edu.cn 
Abstract:
Although bulk SnP3 has been fabricated by experiments in the 1970’s, its electronic and optical properties within several layers have not been reported. Here, based on first-principles calculations, we have predict two-dimensional SnP3 layers as new semiconducting materials that possess indirect band gaps of 0.71 eV (monolayer) and 1.03 eV (bilayer), which are different with the metallic character of bulk structure. Remarkably, 2D SnP3 possesses high hole mobility of 9.171×104 cm2 V?1 s?1 and high light absorption (~106 cm-1) in the whole visible spectrum, which predict 2D SnP3 layers as prospective candidates for nanoelectronics and photovoltaics. Interestingly, we found that 2D SnP3 bilayer shows similar electronic and optical characters with silicon. Considering the great success of silicon-based microelectrics and photovoltaics, our results may benefit the related researches at nano scale.
Key words:  Stannum Phosphide, Electronic properties, First-principles Calculations, Semiconductor
FundProject:
Two-dimensional VDW Crystal SnP3 with High Carrier Mobility and Extraordinary Sunlight Absorbance
KEJ
摘要:
Although bulk SnP3 has been fabricated by experiments in the 1970’s, its electronic and optical properties within several layers have not been reported. Here, based on first-principles calculations, we have predict two-dimensional SnP3 layers as new semiconducting materials that possess indirect band gaps of 0.71 eV (monolayer) and 1.03 eV (bilayer), which are different with the metallic character of bulk structure. Remarkably, 2D SnP3 possesses high hole mobility of 9.171×104 cm2 V?1 s?1 and high light absorption (~106 cm-1) in the whole visible spectrum, which predict 2D SnP3 layers as prospective candidates for nanoelectronics and photovoltaics. Interestingly, we found that 2D SnP3 bilayer shows similar electronic and optical characters with silicon. Considering the great success of silicon-based microelectrics and photovoltaics, our results may benefit the related researches at nano scale.
关键词:  Stannum Phosphide, Electronic properties, First-principles Calculations, Semiconductor
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