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Growth of 3C-SiC Films on On-axis 6H-SiC Substrates by LPCVD
Hai-wu Zheng,Zhu-xi Fu,Bi-xia Lin,Xiao-guang Li*
Author NameAffiliationE-mail
Hai-wu Zheng Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Zhu-xi Fu Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Bi-xia Lin Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China  
Xiao-guang Li* Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China lixg@ustc.edu.cn, Tel./Fax: +86-551-3603408 
Abstract:
Cubic SiC (3C-SiC) films were deposited on on-axis 6H-SiC (0001) substrates by low-pressure chemical vapor deposition (LPCVD). The result of X-ray diffraction patterns shows that the 3C-SiC films were of good crystalline quality. The influence of the growth parameters (flow rates of the gas sources and growth temperature) on the growth rate of the SiC films is discussed. The results show that the transport of silane or its reaction products is the limiting factor for the growth. The surface morphology of the SiC films was observed by atomic force microscope imaging. From these results it can be concluded that the growth of the films is in agreement with a Stranski-Krastanov growth mode.
Key words:  3C-SiC, on-axis 6H-SiC, LPCVD, Growth mode
FundProject:
正轴6H-SiC 衬底上3C-SiC薄膜的低压化学气相沉积生长
郑海务,傅竹西,林碧霞,李晓光*
摘要:
活性的O-和OH-被认为在苯酚形成过程中起了重要作用.通过低压化学气相沉积,在正轴6H-SiC(0001)衬底上沉积了3C-SiC薄膜,X射线衍射表明薄膜结晶质量良好.研究了生长参数对生长速率的影响,发现硅烷及其分解产物的输运是薄膜生长的限定因素.用原子力显微镜观察薄膜的表面形貌.这些结果表明薄膜的生长符合S-K方式.
关键词:  3C-SiC,正轴6H-SiC,低压化学气相沉积,生长模式
DOI:10.1088/1674-0068/20/03/305-307
分类号: