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Calculations for Spin-allowed Transitions Between Energy Levels Above the 3s3p State in Si III
Jing Fan,Tian-yi Zhang,Neng-wu Zheng*,Dong-xia Ma,Tao Wang
Author NameAffiliationE-mail
Jing Fan Department of Chemistry, University of Science and Technology of China, Hefei 230026, China  
Tian-yi Zhang Department of Chemistry, University of Science and Technology of China, Hefei 230026, China  
Neng-wu Zheng* Department of Chemistry, University of Science and Technology of China, Hefei 230026, China nwzheng@ustc.edu.cn 
Dong-xia Ma Department of Chemistry, University of Science and Technology of China, Hefei 230026, China  
Tao Wang Department of Chemistry, University of Science and Technology of China, Hefei 230026, China  
Abstract:
Spin-allowed transition probabilities between energy levels above the 3s3p state of Si III are reported by employing a coupled equation within WBEPM theory. The results show a good agreement with critical values, with the derivations mostly less than 15%. The method can readily be applied to highly excited states without any extra effort.
Key words:  Transition probability, Si III, WBEPM theory
FundProject:
二价硅离子高于3s3p态能级间自旋允许跃迁的理论计算
范婧,张天忆,郑能武*,马东霞,王涛
摘要:
在最弱受约束电子势模型理论中,电子被分成最弱受约束电子和非最弱受约束电子,而假定最弱受约束电子在核和非最弱受约束电子形成的势场中运动,这样许多多电子体系的问题可以简化成最弱受约束电子的单电子问题来解决.最弱受约束电子势模型理论已经被成功地应用于跃迁几率,振子强度和原子能级的计算.应用一组方程计算了Si III的离子自旋允许跃迁的跃迁几率,计算结果与标准值比较是相当令人满意的,误差均在15%以下.而且表明最弱受约束电子势模型理论可以非常简便并准确地应用于计算高激发态间的跃迁几率.
关键词:  跃迁几率,二价硅离子,最弱受约束电子势模型理论
DOI:10.1088/1674-0068/20/03/265-272
分类号: