引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1501次   下载 842 本文二维码信息
码上扫一扫!
分享到: 微信 更多
Preparation and Photoluminescence of ZnO Nanorods Arrays
Hong-juan Zhang ,Ying-ling Yang ,You-ming Zou ,Rui Deng ,Zheng Chen ,Hong-gao Tang
Author NameAffiliation
Hong-juan Zhang Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
Ying-ling Yang Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
You-ming Zou Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
Rui Deng Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
Zheng Chen Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
Hong-gao Tang Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China 
Abstract:
A high-density well-aligned Zinc Oxide nanorod array was synthesized on Si (100) substrate by a simplevapor deposition under normal pressure using neither a catalyst and nor pre-deposition of ZnO film. Various different morphologies were obtained in different deposition regions. Si substrate put over the Zn source was the key factor in getting a well-aligned sample. Field emission scanning electron microscope (FESEM) observations and X-ray diffraction were carried out to characterize the surface morphology and crystalline quality of the samples. The growth mechanism is discussed. The photoluminescence properties of the ZnO samples were also investigated. It is suggested that the green band is related to oxygen vacancies and thekinetic process involving transition from shallow donor to deep acceptor level.
Key words:  Nanorod, Thermal evaporation, Photoluminescence luminescence, ZnO
FundProject:This work was supported by the Knowledge Innovation project of Chinese Academy of Science(No.CKJCXZ-SW-04).
热蒸发法制备ZnO纳米棒阵列
张红娟 ,杨应岭 ,邹优鸣 ,邓锐 ,陈征 ,汤洪高*
摘要:
氩气氛常压下,利用热蒸发法,在无催化剂、无ZnO预沉积层的硅衬底上制备了取向良好,排列整齐的ZnO纳米棒阵列.在距Zn源不同位置的Si衬底上得到了不同形貌的样品.硅衬底置于锌源正上方是得到取向一致的ZnO纳米阵列的一个关键性条件.用场发射扫描电子显微镜、X射线粉末衍射表征样品表面形貌、晶体结构.进一步研究了样品的生长机制和荧光性质.
关键词:  纳米棒,热蒸发,PL,ZnO
DOI:10.1360/cjcp2007.20(2).213.4
分类号: