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Radiative Properties of Tm3+ Doped in Transparent PLZT for Active Electro-optical Applications
Bao-zeng Li ,Xue-sheng Chen ,Hua Jiang ,Zhi-qiang Zheng ,An-ting Wang ,Hai Ming*
Author NameAffiliation
Bao-zeng Li Department of Physics, University of Science and Technology of China, Hefei 230026, China 
Xue-sheng Chen Department of Physics and Astronomy, Wheaton College, Norton, MA 02766, USA 
Hua Jiang Boston AppliedTechnologies, Inc., 150H New Boston Street, Woburn, MA 01801, USA 
Zhi-qiang Zheng Department of Physics,Fujian Normal University, Fuzhou, Fujian 350007, China 
An-ting Wang Department of Physics, University of Science and Technology of China, Hefei 230026, China 
Hai Ming* Department of Physics, University of Science and Technology of China, Hefei 230026, China 
Abstract:
The optical transition probability of Tm3+ (7.0 mol%) doped PLZT was investigated because of its great interest in many fields such as optical communications in the mid-infrared waveband and medical instrumentation. The absolute intensities of its forced electric dipole transitions between 420 and 2000 nm were measured. According to Judd-Ofelt (J-O) theory, three phenomenological parameters, ?2=9.133£10-21 cm2, ?4=1.529£10-21 cm2 and ?6=1.712£10-21 cm2, were obtained. The J-O intensity parameters were used to calculate the radiative lifetime (7.493 ms) of the excited 3F4 level. The stimulated emission cross-section for the 3F4!3H6 transition was also evaluated. Analysis reveals that Tm3+-doped PLZT is promising for use as e±cient optical amplification devices or zero-loss electro-optical devices.
Key words:  Tm3+, PLZT, Judd-Ofelt analysis, Radiative lifetime
FundProject:This work was supported by the National Natural Science Foundation of China (No.90201013) and China Postdoctoral Science Foundation (No.2004036465).
掺铥PLZT透明光电陶瓷的光辐射特性
厉宝增 ,陈雪生 ,蒋华 ,郑志强 ,王安廷 ,明海*
摘要:
根据J-O理论研究掺Tm3+的光电陶瓷PLZT的激光潜能,利用Tm3+的420?2000 nm的吸收光谱拟合出了其强度参量,即?2=9.133£10-21 cm2, ?4=1.529£10-21 cm2和?6=1.712£10-21 cm2,进而由强度参量计算了辐射跃迁几率、辐射寿命、荧光分支比和1865 nm荧光峰的受激发射截面等光学参数.
关键词:  Tm3+, PLZT, J-O理论
DOI:10.1360/cjcp2007.20(2).145.4
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