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Chemical Vapor Deposition Mechanism of Copper Films on Silicon Substrates
Song Wu,Bo Tao,Yong-ping Shen,Qi Wang*
Author NameAffiliationE-mail
Song Wu Department of Chemistry, Zhejiang University, Hangzhou 310027, China  
Bo Tao Department of Chemistry, Zhejiang University, Hangzhou 310027, China  
Yong-ping Shen Department of Chemistry, Zhejiang University, Hangzhou 310027, China  
Qi Wang* Department of Chemistry, Zhejiang University, Hangzhou 310027, China qiwang@zju.edu.cn 
Abstract:
A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu(hfac)2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode (island), and then transforms to Stranski-Rastanov mode (layer-by-layer plus island).The mechanism of Cu nucleation on silicon (100) substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu(hfac) formed by the thermal dissociation of Cu(hfac)2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu(hafc)2 and H2 occurs.
Key words:  Metal-organic chemical vapor deposition, Copper film, Silicon (100), Deposition reaction mechanism
FundProject:
单晶硅上化学气相沉积铜薄膜的机理研究
吴松,陶波,沈永平,王琦*
摘要:
在自行设计、建立的MOCVD系统上,以Cu(hfac)2为反应前驱物在单晶硅上进行铜薄膜的化学气相沉积,并用AFM、SEM对铜核的成长机理进行了研究.结果表明,反应初期,单晶硅上铜核的成长为岛状,反应后期为先层状后岛状.利用XPS对铜薄膜成长的反应机理进行了探讨,由薄膜的Cu2p、O1s、F1s、Si2p谱可推论出,XPS谱中所出现的C=O、OH及CF3/CF2可能为Cu(hfac), 当Cu(hfac)2在高温下分解成Cu(hfac)及hfac后, H2还原表面的hfac生成OH基,反应进行一段时间,
关键词:  有机金属化学气相沉积, 铜薄膜, 单晶硅(100), 沉积反应机理
DOI:10.1360/cjcp2006.19(3).248.5
分类号: