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In situ Heating and Thermal Effects in Auger Electron Spectroscopy for GaN
Fu-chun Xu*,Qi-he Zhang,Dan-xia Cen
Author NameAffiliationE-mail
Fu-chun Xu* Analysis and Testing Centre; Department of Physics, Xiamen University, Xiamen 361005, China sca@xmu.edu.cn 
Qi-he Zhang Analysis and Testing Centre, Xiamen 361005, China  
Dan-xia Cen Analysis and Testing Centre, Xiamen 361005, China  
Abstract:
An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.
Key words:  Ultra-high-vacuum, Auger electron spectroscopy, Heating system, In situ, Auger line shape
FundProject:
超高真空俄歇电子能谱原位加热和GaN热效应研究
徐富春*,张棋河,岑丹霞
摘要:
建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究.随着温度的增加, Ga LMM 和GaMVV的动能减小.利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移.
关键词:  超高真空, 歇电子能谱, 原位, 加热系统, 俄歇线形
DOI:10.1360/cjcp2006.19(3).200.3
分类号: