引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1467次   下载 1187 本文二维码信息
码上扫一扫!
分享到: 微信 更多
In situ Heating and Thermal Effects in Auger Electron Spectroscopy for GaN
Fu-chun Xu*1,2, Qi-he Zhang3, Dan-xia Cen3
1.Analysis and Testing Centre;2.Department of Physics, Xiamen University, Xiamen 361005, China;3.Analysis and Testing Centre, Xiamen 361005, China
Abstract:
An in situ heating system was built for the Auger electron spectroscopy to investigate the thermal effect of Auger lines. A GaN sample was studied in this system. The kinetic energy of Ga LMM and MVV Auger lines were observed to shift negatively with temperature increasing. By using ab initio calculation, the theoretical Ga MVV Auger line shape was fit, which well reflects the inner property of the line. The Auger shift with heating is related with the valence electron rearrangement in the thermal expansion of the local bonds.
Key words:  Ultra-high-vacuum, Auger electron spectroscopy, Heating system, In situ, Auger line shape
FundProject:
超高真空俄歇电子能谱原位加热和GaN热效应研究
徐富春*,张棋河,岑丹霞
1.厦门大学分析测试中心,厦门,361005;2.厦门大学物理学系,厦门,361005
摘要:
建立一套基于超高真空俄歇电子能谱的原位加热系统,对GaN薄膜进行热效应研究.随着温度的增加, Ga LMM 和GaMVV的动能减小.利用第一性原理计算,获得理论的GaMVV俄歇谱.加热过程由于晶格热膨胀以及表面原子再构引起价电子态密度发生变化,从而导致价带俄歇谱负移.
关键词:  超高真空, 歇电子能谱, 原位, 加热系统, 俄歇线形
DOI:10.1360/cjcp2006.19(3).200.3
分类号: