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Al/GaSb Contact with Slow Positron Beam
Hai-yun Wang ,Hui-min Weng* ,C. C. Ling ,Bang-jiao Ye ,Xian-yi Zhou
Author NameAffiliation
Hai-yun Wang Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China 
Hui-min Weng* Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China 
C. C. Ling Department of Physics, The University of Hong Kong, Hong Kong, China 
Bang-jiao Ye Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China 
Xian-yi Zhou Department of Modern Physics, University of Science and Technology of China, Hefei 230026, China 
Abstract:
Annealing study of the Al/GaSb system was performed by using a slow positron beam and the measurement of X-ray diffraction. The S parameter against positron energy data were fitted by a three layer model (Al/interface/GaSb). It was found there was a ~5 nm interfacial at the region between the Al layer and bulk in the sample of as-deposited. After the 400 ℃ annealing, this interfacial region extends to over 40 nm and S parameter dramatically drops. This is possibly due to a new phase formation induced by the atoms'inter-diffusion at the interface. The annealing out of the open volume defects in the Al layer was revealed by the decrease of the S parameter and the increase of the effective diffusion length of the Al layer. Annealing behaviors of Sb and Lb of the GaSb bulk showed the annealing out of positron traps at 250 ℃. However,further annealing at 400 ℃ induces formation of positron traps, which are possibly another kind of VGarelated defect and the positron shallow trap GaSb anti-site. The results of the X-ray diffraction experiment verified the conclusion of obtained by using positron technology.
Key words:  Positron, Defect, Trapping, Al/GaSb, Interface
FundProject:
Al/GaSb异质结的慢正电子研究
王海云,翁惠民*,C. C. Ling,叶邦角,周先意
摘要:
用单能慢正电子束和X射线衍射方法研究了Al/n-GaSb金属半导体异质结在不同温度退火的情况下的演变.采用三层模型既Al/界面/GaSb对S-E实验数据进行拟合.结果发现在未退火样品的Al和GaSb之间存在一个厚度大约5 nm的界面层.在经过400℃退火后,该界面厚度增加到约400 nm,且S参数下降.这可能是由于在退火过程中,界面区域的原子在界面处相互扩散所引起的.Al膜的SAl参数降低且有效扩散长度LAi增加,说明Al膜内的空位缺陷经过退火被消除且进行结构重整,晶格结构不断变好的结果.衬底GaSb的S
关键词:  正电子  Al/GaSb异质结构  缺陷  界面  捕获
DOI:10.1360/cjcp2006.19(2).169.4
分类号: