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Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline) Aluminum Film
Yi-feng Xu ,Han-jie Zhang ,Qiao Chen ,Hai-yang Li ,Shi-ning Bao,Pi-mo He*
Author NameAffiliationE-mail
Yi-feng Xu Department of Physics, Zhejiang University, Hangzhou 310027, China  
Han-jie Zhang Department of Physics, Zhejiang University, Hangzhou 310027, China  
Qiao Chen Chemistry Department, University College London, 20 Gordon Street, London, WC1H OAJ, UK  
Hai-yang Li Department of Physics, Zhejiang University, Hangzhou 310027, China  
Shi-ning Bao Department of Physics, Zhejiang University, Hangzhou 310027, China  
Pi-mo He* Department of Physics, Zhejiang University, Hangzhou 310027, China phypmhc@dial.zju.edu.cn  
Abstract:
In situ thickness dependent photoluminescence (PL) measurements of tris(8-hydroxyquinoline) aluminum(Alq3) film were performed. At the beginning of Alq3 deposition on the glass substrate, the Alq3 emission showed a sharp red-shift. Further deposition of Alq3 resulted slight red-shift, and finally tended to saturated value. The total red-shift of about 12 nm was observed for the Alq3 film thickness range from 2 to 500 nm.This red-shift was attributed to the change from the 2D to 3D exciton state with increasing Alq3 film thickness. Meanwhile, the PL intensity of Alq3 emission increased continuously, and showed a rate change at the initial deposition of Alq3 due to non-rediative decay of excitons arised from the interaction between excitons and the substrate, and finally tended to saturation with the Alq3 thickness.
Key words:  Tris(8-hydroxyquinoline) aluminum film, Photoluminescence, Red-shift
FundProject:
八-羟基喹啉铝薄膜光致发光的厚度依赖性质
徐以锋,张寒洁,陈桥,李海洋,鲍世宁,何丕模*
摘要:
通过原位测量对八-羟基喹啉铝薄膜(Alq3)光致发光的厚度依赖性质进行了研究.在Alq3向玻璃衬底沉积的初始阶段,Alq3光致发光谱峰发生了显著红移,此后谱峰随着Alq3厚度的增加红移变缓并趋于饱和.Alq3薄膜厚度从2 nm逐渐变化到500 nm时,Alq3谱峰位总红移约为12 nm.这种Alq3薄膜沉积的初始阶段Alq3谱峰的显著红移可归因于二维激子向三维激子态的转变.同时,由于激子同衬底的相互作用所引起的非辐射衰变,在Alq3沉积的初始阶段Alq3光致发光谱峰的强度呈现不同的变化,随后该谱峰的强度随
关键词:  八-羟基喹啉铝薄膜  光致发光  红移
DOI:10.1360/cjcp2006.19(2).152.3
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