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Influence of Substrate Temperature on the Structure and Electric Properties of ZnO Films
Lu Hui*,Yin Qijun,Xia Jiaozhen,Pan Xiaoren
Author NameAffiliationE-mail
Lu Hui* Department of Physics, East China University of Science and Technology, Shanghai 200237 luhui@ecust.edu.cn  
Yin Qijun Department of Physics, East China University of Science and Technology, Shanghai 200237  
Xia Jiaozhen Department of Physics, East China University of Science and Technology, Shanghai 200237  
Pan Xiaoren Department of Physics, East China University of Science and Technology, Shanghai 200237  
Abstract:
ZnO films were deposited on glass substrates by gas discharge reaction evaporation. The influences of substrate temperature on the surface morphology, crystal structure and electric properties of ZnO films were studied by scanning electron microscopy, atomic force microscopy, X-ray diffraction spectroscopy and complex impedance spectroscopy. The results show that the films with dense and amorphous structure and lower grain boundary resistance were deposited at room temperature. When the substrate temperature is higher than 50 ℃, the films with certain c-axis orientation can be deposited. With the increase of the substrate temperature, the preferential orientation of ZnO films along c-axis is augmented, the tensile stress along c-axis orientation decreases and the grain boundary resistance increases in a marked degree. When the substrate temperature is higher than 100 ℃, the increasing trend of the preferential orientation of ZnO films along c-axis slows down. ZnO films possess high preferential c-axis orientation and best crystalline quality at 180-200 ℃. These possess a smooth surface, symmetrical grain dimension (i.e. 30-40 nm), inerratic crystal shape, less tensile stress and 0.965 epitaxial degree along the c-axis direction. Here the grain boundary effect increases and the grain boundary resistance is evidently more than that of the films deposited at room temperature. The mechanism by which substrate temperature affects crystal structure and grain boundary properties were also discussed.
Key words:  ZnO films, Substrate temperature, Structure, Stress, Complex impedance spectroscopy
FundProject:
衬底温度对ZnO薄膜晶体结构和电学性质的影响研究
陆慧*,阴其俊,夏姣贞,潘孝任
摘要:
由GDARE法在较低温度下,以玻璃为衬底沉积ZnO薄膜,用SEM、 AFM、 XRD及交流阻抗谱测量等方法研究了衬底温度对薄膜表面形貌、晶体结构以及晶体导电性质的影响.研究结果表明,室温下沉积的薄膜为颗粒致密的非晶相结构,晶界电阻较小.在衬底温度大于50 ℃时,由GDARE法可沉积出具有一定c轴取向的ZnO薄膜.随衬底温度的升高,薄膜沿c轴择优生长趋势明显增强,内应力减小,晶界效应增强,晶界电阻增大.衬底温度大于100 ℃后,沿c轴的取向度增强趋势减缓.在衬底温度180~200 ℃时,可获得高度c轴取向的
关键词:  ZnO薄膜  衬底温度  晶体结构  应力  阻抗谱
DOI:10.1088/1674-0068/18/6/1034-1038
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