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Asymmetric Broadening of A1(LO) Raman Peak of Nanocrystal Aggregated GaN Nanowires
Chen Yiming,Wang Guanzhong*,Han Xinhai,Li Dapeng,Xie Xing,Wang Qingtao
Author NameAffiliation
Chen Yiming Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 
Wang Guanzhong* Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 
Han Xinhai Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 
Li Dapeng Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 
Xie Xing Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 
Wang Qingtao Structure Research Laboratory and Department of Physics, University of Science and Technology of China, Hefei 230026 
Abstract:
Novel GaN nanowires were synthesized by a chemical vapor deposition (CVD) method. The morphology and structure of the nanowires were investigated by SEM, XRD and Raman spectra. Results show that GaN nanowires are formed by aggregated GaN nanocrystals, which is due to the non-uniform precipitation of GaN from catalyst droplet. An asymmetric broadening and shifting to lower frequency of A1(LO) peak are observed in the Raman spectra, which mainly contribute to the Fano interference between scattering from the k=0 optic phonon and electronic continuum scattering from laser-induced electrons.
Key words:  CVD, GaN, Nanowires, Fano interference
FundProject:
纳米晶粒团聚GaN纳米线A1(LO) Raman峰的非对称展宽
陈伊鸣,王冠中*,韩新海,李大鹏,谢兴,王清涛
摘要:
关键词:  CVD  GaN  纳米线  Fano共振
DOI:10.1088/1674-0068/18/4/465-468
分类号: