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Surface Structure and Photon Absorption Property of Supported Coupled Semiconductors MoO3-TiO2/SiO2
Hu Rongrong, Zhong Shunhe*
College of Chemical Engineering and Technology, Tianjin University, Tianjin 300072
Abstract:
Solid material of supported coupled semiconductors MoO3-TiO2/SiO2 was prepared by the chemical modification method. BET, XRD, TEM,IR, Raman and UV-Vis DRS experiments were used to characterize the surface structure, photon absorbing and chemisorbing ability of the material. It was shown that there are some extremely small particles of anatase and MoO3 crystallites dispersed well on the surface of SiO2, which also can be coupled each other by the bonds of Ti-O-Mo. The active adsorption sites of the material exist on its surface, according to IR results, and C3H8 can be chemisorbed at the Lewis base sites of the Mo=O bonds to form molecular states. Compared with MoO3 and TiO2, the edge energy of MoO3-TiO2/SiO2 was improved and a significant rise of the photon absorbing intensity is observed, which proves the coupled structure has stronger photon ability to take in the UV light, hold back the recombination of photoexcited electron hole pairs and exhibit the quantum size effects.
Key words:  Coupled semiconductors, Chemical modification method, Photocatalysis, Edge energy, Photon absorbing intensity
FundProject:
负载型复合半导体MoO3-TiO2/SiO2的结构与吸光性能
胡蓉蓉, 钟顺和*
天津大学化工学院,天津,300072
摘要:
采用表面改性法制备了负载型复合半导体材料MoO3-TiO2/SiO2,用X射线衍射、比表面测定、透射电子显微镜、红外光谱、拉曼光谱、紫外可见漫反射等技术对固体材料的结构进行了表征,并从固体材料的光响应性能和化学吸附性能方面进行了评价.结果表明, MoO3-TiO2/SiO2表面存在着高度分散的MoO3和TiO2微晶,它们之间有一定的复合和键联作用,形成了Mo-O-Ti键; MoO3-TiO2/SiO2复合材料表面对丙烷分子有化学吸附性能, Mo=O键上的端氧是C3H8的活性吸附位;与本体MoO3和TiO2
关键词:  复合半导体  表面改性法  光催化  能隙值  吸光强度
DOI:10.1088/1674-0068/18/3/389-394
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