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Current Transport Under High Magnetic Fields in Ni/4H-SiC Schottky Barrier
Yang Wei,Li Guang,Li Xiaoguang*,Xie Jiachun,Xu Jun
Author NameAffiliationE-mail
Yang Wei Structure Research LaboratoryDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026  
Li Guang Structure Research LaboratoryDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026  
Li Xiaoguang* Structure Research LaboratoryDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026 lixg@ustc.edu.cn 
Xie Jiachun Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026  
Xu Jun Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026  
Abstract:
Ni/4H-SiC Schottky contacts with good characteristics were fabricated using electron beam evaporation to deposit Ni on 4H-SiC((0001)Si face). Current-voltage(I-V)characteristics of Ni / 4H-SiC Schottky barrier have been studied in the temperature range from 160 K to 300 K in magnetic fields(B)up to 10 T. The thermionic emission theory and relaxation time approximation Boltzmann eqation were employed to calculate the I - V characteristics,and it is found that the change of current shows a linear relation with B2 and V,and is inversely proportional to the temperature,which well agrees with experimental results.
Key words:  SiC,Schottky contacts,Barrier,Magnetic fields
FundProject:
Ni/4H-SiC 肖特基势垒磁场下输运性质的分析
杨威,李广,李晓光*,谢家纯,徐军
摘要:
采用高真空电子束蒸发的方法将镍(Ni)淀积在4H-SiC(0001)面上,制备出良好的Ni/4H-SiC肖特基接触.研究了Ni/4H-SiC肖特基势垒在强磁场和低温下的I-V特性,并以热电子发射理论为基础,结合弛豫近似玻尔兹曼方程对Ni/4H-SiC肖特基势垒在磁场下的输运性质进行了分析和计算,发现电流的变化与磁场的平方和电压成线性关系,和温度成反比关系,与实验结果基本符合.
关键词:  SiC  高真空电子束蒸发  肖特基接触  势垒  磁场
DOI:10.1088/1674-0068/17/4/449-453
分类号: