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Current Transport Under High Magnetic Fields in Ni/4H-SiC Schottky Barrier
Yang Wei1, Li Guang1, Li Xiaoguang*1, Xie Jiachun2, Xu Jun2
1.Structure Research Laboratory,Department of Materials Science and Engineering,University of Science and Technology of China,Hefei 230026;2.Department of Physics,University of Science and Technology of China,Hefei 230026
Abstract:
Ni/4H-SiC Schottky contacts with good characteristics were fabricated using electron beam evaporation to deposit Ni on 4H-SiC((0001)Si face). Current-voltage(I-V)characteristics of Ni / 4H-SiC Schottky barrier have been studied in the temperature range from 160 K to 300 K in magnetic fields(B)up to 10 T. The thermionic emission theory and relaxation time approximation Boltzmann eqation were employed to calculate the I - V characteristics,and it is found that the change of current shows a linear relation with B2 and V,and is inversely proportional to the temperature,which well agrees with experimental results.
Key words:  SiC,Schottky contacts,Barrier,Magnetic fields
FundProject:
Ni/4H-SiC 肖特基势垒磁场下输运性质的分析
杨威1, 李广1, 李晓光*1, 谢家纯2, 徐军2
1.中国科学技术大学结构分析重点实验室和材料科学与工程系,合肥,230026;2.中国科学技术大学物理系,合肥,230026
摘要:
采用高真空电子束蒸发的方法将镍(Ni)淀积在4H-SiC(0001)面上,制备出良好的Ni/4H-SiC肖特基接触.研究了Ni/4H-SiC肖特基势垒在强磁场和低温下的I-V特性,并以热电子发射理论为基础,结合弛豫近似玻尔兹曼方程对Ni/4H-SiC肖特基势垒在磁场下的输运性质进行了分析和计算,发现电流的变化与磁场的平方和电压成线性关系,和温度成反比关系,与实验结果基本符合.
关键词:  SiC  高真空电子束蒸发  肖特基接触  势垒  磁场
DOI:10.1088/1674-0068/17/4/449-453
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