引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1161次   下载 1868 本文二维码信息
码上扫一扫!
分享到: 微信 更多
The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100)Surface
Ouyang Jianhua,Zhao Xinsheng*
Author NameAffiliationE-mail
Ouyang Jianhua State Key Laboratory for Structural Chemistry of Unstable and Stable SpeciesDepartment of Chemical BiologyCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871  
Zhao Xinsheng* State Key Laboratory for Structural Chemistry of Unstable and Stable SpeciesDepartment of Chemical BiologyCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871 zhaoxs@chem.pku.edu.cn 
Abstract:
The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100)surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area,and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined,and the lateral and longitudinal etching rates of silicon and silica on the Si(100)surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the(100)surface increase with temperatures except for the lateral etching rate of silica in a N2 -bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100)surface show remarkable difference with that on the Si(111)surface in both air-saturated and N2 -bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20. 6-34. 1℃. The similarity of the apparent activation energies for the etching processing of silicon and silica on the(100)surface to that on the(111)surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38. 2℃,and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.
Key words:  Silicon,Silica,Etching rate,Photolithography
FundProject:
硅(100)晶面上硅和二氧化硅的横向与纵向腐蚀速率
欧阳贱华,赵新生*
摘要:
定义了硅表面上硅和二氧化硅的横向腐蚀速率,系统地测量了硅(100)晶面上的硅和二氧化硅在40%(质量分数)氟化铵水溶液中的横向与纵向腐蚀速率,并和硅(111)晶面上的测量结果进行了对比. 对比结果表明,尽管两种晶面上的硅和二氧化硅的腐蚀速率有明显的差别,其相应的表观活化能在误差范围内相同. 实验中还发现,溶液的温度为38.2 ℃时,硅腐蚀过程中形成的气泡对硅的腐蚀速率有显著的影响:开始时加速硅的腐蚀;但随着气泡在硅/ 溶液界面的聚集,阻碍硅的腐蚀.
关键词:    二氧化硅  腐蚀速率  光刻术
DOI:10.1088/1674-0068/17/3/236-240
分类号: