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The Photoluminescence Property of Annealed C (Film) /Si ( SiO2 ) ( Nanometer Particles) /C (Film)
Qiu Xiaoyan,Li Jian
Author NameAffiliationE-mail
Qiu Xiaoyan Department of Physics, Southwest China Normal University, Chongqing 4007 qiuxiaoyan2001@163.nef 
Li Jian Department of Physics, Southwest China Normal University, Chongqing 4007  
Abstract:
A new silicon-based luminescence material-C( F ilm)/S i(S iO,)(nanometer particles)/C ( F ilm) (abbr. C(F)/Si(SiO,)(N)/C(F))is made by sputtering silicon nano-particles on the amorphous carbon film in Ar gas firstly, then depositing amorphous carbon film on silicon nano-particles layer in vacuum. Finally, it has been annealed at 400,650 and 75090 for Ihr espectively. The photoluminescence ( PL) of the sample is tested by fluorescence spectrophotometer. Excited by 250 nm UV-light, the unannealed sample gives a strong PL, band around 398n or( 3.12 e V). After annealed at 6 5090,the sample gives not only PL, band, but also gives another strong PL, band around 360 nor (3.44 eV). The shape and peak position of PL, and PL, are independent on annealing temperature and excited wavelength. On the contrary,the intensities of PL, and PL, are strongly dependent on it; their intensities are the lowest after the sample annealed at 40 0`0 and the highest after annealed at 65090. The shorter the excited wavelen is; the stronger their intensities are. The intensity of PL, band is directly proportional to the ratio of S' 02/S"R elated to the configuration analysis tu01,the sere sultssuggest that the excitation of photonso f PL, band occursin side S iO, nanometerp articles, and the emission of photonscomes from thed effects at the interface between SiO, and Si. PL, band is due to electron-hole recombination inside SiC manometer particles.
Key words:  Photoluminescence, Si(SiO,) manometer particle, Carbon film
FundProject:国家教育部骨干教师资助项目
C(膜)/Si(SiO2)(纳米微粒)/C(膜) 的光致发光性质研究
邱晓燕*,李建
摘要:
用直流辉光溅射法结合真空镀膜法制备出了一种"多层三明治结构"的光致发光材料-C(膜)/Si(SiO2)(纳米微粒)/C(膜)夹层膜,然后分别在400、650和750℃退火1 h.在波长为250 nm的紫外光激发下,刚制备出来未经退火处理的样品具有一个在398nm(3.12 eV)处的紫光宽带PL1峰.在650℃退火后,又出现了一个在360nm(3.44eV)附近的PL2峰.PL1和PL2峰形状和峰位与退火温度和激发波长无关,但强度却与退火温度和激发波长密切相关.结合形态结构分析可知,紫光PL1峰可用量子限制-发光中心(QC-LCs)模型进行解释:即光激发发生在8iO2微粒内部,而光发射源于SiO2与Si界面上的缺陷中心.紫外荧光PL2峰则源自SiC内部的电子-空穴复合发光.
关键词:  光致发光  Si(SiO2)纳米微粒  C膜
DOI:10.1088/1674-0068/15/4/317-320
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