引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1210次   下载 1396 本文二维码信息
码上扫一扫!
分享到: 微信 更多
Energy Band Properties of the Chiral Carbon Nanotubes
Zhang Zhenhua,Peng Jingcui,Chen Xiaohua,Zhang Hua
Author NameAffiliationE-mail
Zhang Zhenhua Department of Applied Physics, Hunan University, Changsha 410082 Department of Imformation and Calculation Science, Changsha Communications College, Changsha 410076 huazhenzhang@163.net  
Peng Jingcui Department of Applied Physics, Hunan University, Changsha 410082  
Chen Xiaohua Department of Applied Physics, Hunan University, Changsha 410082  
Zhang Hua Department of Imformation and Calculation Science, Changsha Communications College, Changsha 410076  
Abstract:
The principal properties of electronic energy band structure for the chiral single-walled carbon nanotube (SWNTs) were investigated. Methods to decide the subband index crossing or approaching the Fermi level and decided the related wave vector ky are developed. Starting from the  A-B effect, the conditions of metal-semiconductor transition continuously for the chiral SWNTs under inducing by the magnetic field are deduced and the general change pattern of energy gap is discussed in detail.
Key words:  Chiral carbon nanotube, Electronic structure, Energy gap
FundProject:国家自然科学基金资助项目(批准号: 59972031)
手性碳纳米管能带特性的研究
张振华*,彭景翠,陈小华,张华
摘要:
探讨手性(chiral)单层碳纳米管(SWNTs)电子结构的主要特点。提出了确定与Fermi能级EF=0相交或相近的子能带指数J及相关的波矢ky值的方法。并直接从A-B效应出发,导出了任意手性角的SWNTs在磁场中发生金属—半导体连续转换的条件,同时对其能隙变化规律进行了详细讨论。
关键词:  手性碳纳米管  电子结构  能隙
DOI:10.1088/1674-0068/14/2/198-204
分类号: