引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1133次   下载 1292 本文二维码信息
码上扫一扫!
分享到: 微信 更多
The Influences of Surface Passivation on Luminescence Properties of Porous Silicon
Li Hongjian,Qu Shu,Jian Zhijian,Peng Jingcui,Xiang Jiannana
Author NameAffiliationE-mail
Li Hongjian The Institute of Electronic Materials,a.College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082 lhjian@mail.hunu.edu.cn  
Qu Shu The Institute of Electronic Materials,a.College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082  
Jian Zhijian The Institute of Electronic Materials,a.College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082  
Peng Jingcui The Institute of Electronic Materials,a.College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082  
Xiang Jiannana The Institute of Electronic Materials,a.College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082  
Abstract:
By using n-butylamine as carbon resource,a layer of carbon film is covered on the parous silicon(PS)surface by means of radio frequency glow discharge.Raman spectra and IR spectra of the carbon film indicate that there are amino-groups and hydrogen atoms in the carbon film.IR spectra exhibits that the surface of the treated sample is mainly covered with Si-C,Si-N and Si-O.The influences of surface passivation of photoluminescence and electroluminescence properties of porous silicon have been presented.PL and EL spectra indicate that PL and EL intensity of the treated samples increase greatly and the blueshift of PL and EL peak compared with the samples without treatment and stable while storing in atmosphere.I~V characteristics reveal that the treated devices have a lower onset voltage.We present that the enhancement of the PL and EL intensity、stability and lower onset voltage of the treated sample is due to the existence of Si-C,Si-N and Si-O on the PS surface simultaneously,and blueshift of the PL and El peak are attributed to amino-groups and hydrogen atmos in the carbon film,As a result,carbon film passivation is a good way to enhance PS luminescent intensity and stability and improve the properties of PS devices.
Key words:  Porous silicon,Surface passivation,Photoluminescence,Electroluminescence
FundProject:湖南省自然科学基金资助项目
多孔硅表面钝化对其发光性能的影响
李宏建,瞿述,剪之渐,彭景翠,向建南
摘要:
报道多孔硅(PS)的表面钝化对其光致发光(PL)和电致发光(EL)的影响。PL和EL谱表明,经钝化处理的PS的PL和EL强度明显增强,且发光峰位较大蓝移;存放实验表明,经钝化处理的PS的PL和EL发光强度和发光峰位具有较好的稳定性;I~V曲线显示,经钝化处理的PS发光器件具有较低的启动电压。这些结果表明:用钝化处理的方法是提高PS的PL和EL强度和稳定性及改善其器件性能的有效途径。
关键词:  多孔硅  表面钝化  光致发光  电致发光
DOI:10.1088/1674-0068/13/4/492-496
分类号: