引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1262次   下载 1145 本文二维码信息
码上扫一扫!
分享到: 微信 更多
Simulation of the Roughening Law for Mo2C Film Surface
Ran Yangqiang1, Zheng Ruilun1, Chen Hong1, Ping Ronggang1, Lu Yi2
1.Department of Physics,Southwest China Normal University,Chongqing 400715;2.Department of Chemistry,Southwest China Normal University,Chongqing 400715
Abstract:
The roughening physics model of Mo2C film surface is improved by introduction the crystalin boundary.The DT2 model is extended by including the temperature.The surface of thin Mo2C film is simulated in computer and the hight of difference distribution is given by means of statistics.The change of roughness with deposited time and temperature is determined.The obtained results show that,the agreement with experimental date is improved by crystalline boundary.The roughening of Mo2C film is rapid roughening and the rougheness increase with increasing the substrate temperature rapidly.
Key words:  Mo2C thin film,Simulation,Roughness
FundProject:
Mo2C膜表面粗糙化规律的计算机模拟
冉扬强1, 郑瑞伦1, 陈洪1, 平荣刚1, 吕弋2
1.西南师范大学物理系重庆 400715;2.西南师范大学化学系重庆 400715
摘要:
引入晶粒边界修正,改进了Mo2C膜表面粗糙化物理模型,将DT2模型推广到包括有温度的情况,对Mo2C膜表面形态进行计算机模拟并统计模拟图的高度分布,确定表面粗糙度随沉积时间和基底温度的变化规律。结果表明:引入晶粒边界修正大大促进了理论与实验结果的一致,Mo2C膜表面粗糙化属快速粗造化,粗造度随基底温度升高而非线性地增大。
关键词:  Mo2C膜  计算机模拟  表面粗造度
DOI:10.1088/1674-0068/13/4/461-467
分类号: