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Discussion on Distribution of Interface Height and Height Difference for Mo2C Thin Film
Zheng Ruilun,Ran Yangqiang,Ping Ronggang,Li Shengze
Author NameAffiliation
Zheng Ruilun Department of Physics,Southwest China Normal University,Chongqing 400715 
Ran Yangqiang Department of Physics,Southwest China Normal University,Chongqing 400715 
Ping Ronggang Department of Physics,Southwest China Normal University,Chongqing 400715 
Li Shengze Institute of Height and New Material,Southwest China Normal University,Chongqing 400715 
Abstract:
Procedure for preparing Mo2C thin film by metalorganic chemical deposition(MOCVD)and experimental data on interface roughness are provided,and the rule for distribution of interface height and height difference is given on basis of measured data.Simulation of 2+1 Dimension interface for Mo2C thin film is carried out through generation of DT2 model.The results show that the distribution of height and height difference is agreement with computer simulated one.
Key words:  Mo2C functional thin film,Distribution of height and height difference,Computer simulation
FundProject:
Mo2C膜表面高度和高差分布规律研究
郑瑞伦,冉扬强,平荣刚,李声泽
摘要:
介绍了金属有机气相沉积(MOCVD)制备Mo2C功能膜的过程和对膜表面粗糙度的测量结果;在测量基础上进行统计,找出Mo2C膜表面高度和高差分布规律;将DT2模型推广,进行2+1维计算机模拟,作出Mo2C膜表面3维模拟图·结果表明:实验测得的高度和高差统计分布与计算机模拟的结果一致。
关键词:  Mo2C功能膜  高度和高差分布  计算机模拟
DOI:10.1088/1674-0068/13/1/77-83
分类号: