引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 747次   下载 377 本文二维码信息
码上扫一扫!
分享到: 微信 更多
Preparation of Cu(In,Al)(Se,S)2 Thin Films by Low-Cost Non-vacuum Hybrid Process
Zhao-fan Liu,Wei Xia,Chen-chen Yuan,Pai-feng Luo*
Author NameAffiliationE-mail
Zhao-fan Liu Department of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China  
Wei Xia Department of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China  
Chen-chen Yuan CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China  
Pai-feng Luo* Department of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China lpfeng@hfut.edu.cn 
Abstract:
Cu(In,Al)(Se,S)2 thin films were successfully obtained through a simple low-cost non-vacuum process. The Cu(In,Al)Se2 raw material powder was firstly synthesized by a tra-ditional solvothermal route. Then, the precursor coatings were prepared by drop-coating Cu(In, Al)Se2 slurry. Finally, the Cu(In,Al)Se2 and Cu(In,Al)(Se,S)2 films were achieved by the selenization and/or sulfuration process. Through X-ray diffraction (XRD), scanning electron microscope, X-ray fluorescence, and absorption spectroscopy measurement, it was found that all the films show the single chalcopyrite phase structure and have the preferred(112) orientation. Meanwhile, after substituting selenium by sulfur, the main XRD peaks shift to higher 2θ degrees and the porous films become more compact. The energy band gap also increases to a suitable range for light absorption from 1.21 eV to 1.33 eV, which indicates that the additional sulfuration process is much more favorable for improving the quality of Cu(In,Al)(Se,S)2 films.
Key words:  Non-vacuum, Solvothermal, X-ray diffraction, Sulfuration
FundProject:
铜铟铝硒硫薄膜的低成本非真空混合法制备
刘兆范,夏伟,袁晨辰,罗派峰*
摘要:
采用溶剂热法制备出铜铟铝硒Cu(In,Al)Se2 (CIASe)粉末,然后滴涂铜铟铝硒CIASe浆料获得前驱体薄膜,最后通过硒化/硫化过程制备出铜铟铝硒CIASe和铜铟铝硒硫CIASeS薄膜.通过XRD、SEM、XRF及光吸收等表征,发现所制备的薄膜为单相的黄铜矿结构,具有(112)择优取向.同时,在使用硫元素替代硒之后,薄膜的XRD主峰向高的2θ角度漂移,多孔薄膜也变得更加致密.薄膜带隙值也增加到更为合适的范围,从1.21 eV增加到1.33 eV,这也说明了硫化过程有利于提高CIASeS薄膜的质量.
关键词:  溶剂热法,非真空,硫化
DOI:10.1088/1674-0068/28/cjcp1502013
分类号: