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Synthesis and Photoluminescence of Amorphous Silicon Oxycarbide Nanowires
Qiu-shi Wang, Wei Zhang, Min Zhong, Jin-wen Ma, Zhi-ying Wu, Gui-qiang Wang
College of New Energy, Bohai University, Jinzhou 121000, China
Abstract:
Synthesis of amorphous SiCO nanowires was carried out by means of direct current arc discharge. Free-standing SiCO nanowires were deposited on the surface of a graphite crucible without any catalyst and template. The SiCO nanowires were analyzed by XRD, SEM, TEM, XPS, and FTIR. The SiCO nanowires were typically 20—100 μm in length and 10—100 nm in diameter as measured by SEM and TEM. The XPS and FTIR spectroscopy analysis confirmed that the Si atoms share bonds with O and C atoms in mixed SiCO units. The PL spectrum of the SiCO nanowires showed strong and stable white emissions at 454 and 540 nm. A plasma-assisted vapor-solid growth mechanism is proposed to be responsible for the formation of the SiCO nanowires.
Key words:  Amorphous materials  Plasma deposition  Nanowires, Photoluminescence
FundProject:
非晶碳氧化硅纳米线的合成与光致发光
王秋实, 张伟, 钟敏, 马晋文, 吴志颖, 王桂强
渤海大学新能源学院,锦州 121000
摘要:
利用直流电弧放电合成非晶碳氧化硅(SiCO)纳米线,不使用催化剂和模板,独立的SiCO 纳米线沉积在石墨锅的表面.通过XRD、SEM、TEM、XPS、FTIR等对SiCO纳米线进行了表征.结果表明,纳米线长度为20~100 μm,直径为10~100 nm,Si原子同C原子和氧原子分享成键组成SiCO单元.SiCO纳米线的光致发光谱在454和540 nm呈现了强而稳定的白色发光峰. SiCO纳米线的生长机制为等离子辅助气―固生长机制.
关键词:  非晶材料  等离子体沉积  纳米线  光致发光
DOI:10.1063/1674-0068/28/cjcp1411200
分类号: