| Author Name | Affiliation | E-mail | | Peng-cheng Huo | Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China | | | Guang Tao Fei* | Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China | gtfei@issp.ac.cn | | Yang Zhang | Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China | | | Li-de Zhang | Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China | |
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| Abstract: |
| The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi-tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along [01112] and the electric con-ductance of the nanowires had a strong temperature dependence. |
| Key words: Bismuth nanowire, Semimetal-to-semiconductor transition, Electric conduc-tance |
| FundProject: |
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| 铋纳米线中电导的温度依赖性 |
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霍鹏程,费广涛*,张阳,张立德
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| 摘要: |
| 采用电沉积的方法在多孔氧化铝模板中合成了直径为30 nm且沿着[0112]方向生长的单晶铋纳米线，测量了纳米线电导随着温度78～320 K变化的关系曲线. 结果发现，其半金属半导体转变的温度为230 K，且纳米线的电导有很强的温度依赖性. |
| 关键词: 铋纳米线，半金属半导体转变，电导 |
| DOI：10.1063/1674-0068/28/cjcp1409164 |
| 分类号: |