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Temperature-Dependent Electrical Conductance of Bi Nanowires
Peng-cheng Huo,Guang Tao Fei*,Yang Zhang,Li-de Zhang
Author NameAffiliationE-mail
Peng-cheng Huo Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China  
Guang Tao Fei* Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China gtfei@issp.ac.cn 
Yang Zhang Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China  
Li-de Zhang Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China  
Abstract:
The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi-tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along [01112] and the electric con-ductance of the nanowires had a strong temperature dependence.
Key words:  Bismuth nanowire, Semimetal-to-semiconductor transition, Electric conduc-tance
FundProject:
铋纳米线中电导的温度依赖性
霍鹏程,费广涛*,张阳,张立德
摘要:
采用电沉积的方法在多孔氧化铝模板中合成了直径为30 nm且沿着[0112]方向生长的单晶铋纳米线,测量了纳米线电导随着温度78~320 K变化的关系曲线. 结果发现,其半金属半导体转变的温度为230 K,且纳米线的电导有很强的温度依赖性.
关键词:  铋纳米线,半金属半导体转变,电导
DOI:10.1063/1674-0068/28/cjcp1409164
分类号: