引用本文:
【打印本页】   【HTML】   【下载PDF全文】   View/Add Comment  【EndNote】   【RefMan】   【BibTex】
←前一篇|后一篇→ 过刊浏览    高级检索
本文已被:浏览 1390次   下载 1224 本文二维码信息
码上扫一扫!
分享到: 微信 更多
Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal
Jing-yu Hu,Waqas Mahmood,Qing Zhao*
Author NameAffiliationE-mail
Jing-yu Hu School of Physics, Beijing Institute of Technology, Beijing 100081, China  
Waqas Mahmood School of Physics, Beijing Institute of Technology, Beijing 100081, China  
Qing Zhao* School of Physics, Beijing Institute of Technology, Beijing 100081, China qzhaoyuping@bit.edu.cn 
Abstract:
The irradiation effects of Ar+, He+, and S+ with energy from 10 eV to 180 eV on n-InP(100) surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S+ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S+ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S+ ions can efficiently repair the Ar+ damaged surface, and finally form a fine 2×2 InP surface.
Key words:  Low energy ion bombardment, Annealing, Surface damage, Fermi level
FundProject:
Ar+, He+,S+离子轰击n-InP单晶表面的机理研究
胡靖宇,Waqas Mahmood,赵清*
摘要:
通过X射线光电子能谱和低能电子衍射实验研究了10~180 eV的Ar+、 He+、S+离子轰击n-InP(100)表面, 发现S+离子轰击可以产生In-S组分,减轻离子轰击对表面的物理损伤.对于Ar+离子轰击后的表面,经过S+离子处理和加热过程以后,表面损伤得到了修复,最终得到了2×2的InP表面,进一步验证了S+离子对InP表面的修复作用.
关键词:  低能离子轰击,加热,表面损伤,费米能级
DOI:10.1063/1674-0068/27/01/82-86
分类号: