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Impact of Surface Dipole on Resonant Electron Injection in Scanning Tunneling Spectroscopy
Qi-hui Wu*,Shun-qing Wu,C. I. Pakes
Author NameAffiliationE-mail
Qi-hui Wu* Department of Chemistry, College of Chemistry and Life Science, Quanzhou Normal University, Quanzhou 362000, China qhwu@qztc.edu.cn 
Shun-qing Wu Department of Physics, Xiamen University, Xiamen 361005, China  
C. I. Pakes Department of Physics, La Trobe University, Victoria 3086, Australia  
Abstract:
Resonant electron injection and first-principles calculations are utilized to study single-adsorbed selenium (Se) atom on a Si(111)-7×7 surface. Theoretical calculations indicate that a negative dipole of 0.61 eV forms toward the adsorbed Se atom due to electron trans-fer from the associated Si atoms. The formation of surface dipole modifies the effective tunneling barrier height and causes a shift in the energy of the resonant state formed in the vacuum gap between the tip and the sample surface. The experimental data imply that an outward negative surface dipole of 0.61 eV causes a resonant electron injection bias shift to high voltage of about 0.45 V.
Key words:  Surface dipole, Selenium, Scanning tunneling microscopy, Resonant injection
FundProject:
表面偶极子对扫描电子显微镜共振电子注入的影响
吴启辉*,吴顺情,C. I. Pakes
摘要:
用共振电子注入法和第一性原理计算研究了硒(Se)单原子在Si(111)-7×7表面的吸附. 理论结果表明由于不同的电负性,表面Si原子会向吸附的Se原子发生电子转移,从而导致一个0.61 eV的表面偶极子形成. 该表面偶极子改变了Si表面的有效隧道能垒同时导致在样品和扫描电子显微镜针尖之间真空间隙中共振态能级的移动. 并且0.61 eV的表面偶极子会引起共振电子注入偏压向高电位移动0.45 V.
关键词:  表面偶极子,硒,扫描隧道显微镜,共振注入
DOI:10.1063/1674-0068/26/04/393-397
分类号: