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Carriers-assisted Enhanced Ferromagnetism in Al-doped ZnMnO Nano-crystallites
Shahid Atiq*,Saadat A.Siddiqi,Fazal Abbas,Murtaza Saleem,Shahid M. Ramay
Author NameAffiliationE-mail
Shahid Atiq* Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, Pakistan satiq.cssp@pu.edu.pk 
Saadat A.Siddiqi Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, PakistanInterdisciplinary Research Centre in Biomedical Materials, COMSATS Institute of Information Technology, Lahore, Pakistan  
Fazal Abbas Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, Pakistan  
Murtaza Saleem Centre of Excellence in Solid State Physics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, Pakistan  
Shahid M. Ramay Chemical Engineering Department, College of Engineering, King Saud University, P.O. Box 800, Riyadh 11421, Saudi Arabia  
Abstract:
Zn0.95-xAlxMn0.05O (x=0, 0.03, 0.05, and 0.07) dilute magnetic semiconductor materials have been synthesized by sol-gel auto-combustion technique. The effect of Al doping on the structural, electrical, and magnetic properties has been investigated. X-ray diffraction studies demonstrate the existence of single phase characteristic hexagonal wurtzite type crystal structure, similar to the host ZnO, in all the synthesized compositions. Although, the microscopic images revealed that the grains were clustered, yet some individual grains could be seen to have hexagonal texture. Electrical resistivity was observed to decrease with the rise of temperature up to 450 oC, depicting the characteristic semiconductor behavior. Room temperature ferromagnetic behavior was observed in all the compositions. The value of saturation magnetization increased with the increase of Al concentration in ZnMnO system referred to the gradual enhancement of free carriers.
Key words:  Diluted magnetic semiconductor, Al-doped ZnMnO, Sol-gel, Ferromagnetism
FundProject:
铝掺杂ZnMnO纳米晶体的载流子调控铁磁性
Shahid Atiq*,Saadat A.Siddiqi,Fazal Abbas,Murtaza Saleem,Shahid M. Ramay
摘要:
通过溶胶-凝胶自燃烧技术合成了Zn0.95-xAlxMn0.05O(x=0、0.03、0.05和0.07)稀磁半导体材料. 并且研究了Al掺杂对Zn0.95-xAlxMn0.05O结构、电学和磁学性质的效果. X射线衍射显示合成的组合物为单相六方晶系纤锌矿型晶体结构,类似于氧化锌.显微图像显示颗粒呈团簇状,但一些单个颗粒呈现六角形纹理. 观察到的电阻率随温度升高(达450 oC)而降低,显示为半导体行为特征.所有组合物具有室温铁磁行为. 饱和磁化强度的值随着Al(载流子)浓度的增加而增加.
关键词:  稀磁半导体材料,溶胶-凝胶,Al掺杂ZnMnO,铁磁性
DOI:10.1063/1674-0068/26/04/457-461
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