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One-step Fabrication of Nanoporous Black Silicon Surfaces for Solar Cells using Modified Etching Solution
Ye-hua Tang1,2, Chun-lan Zhou1, Su Zhou1,2, Yan Zhao1,2, Wen-jing Wang*1, Jian-ming Fei3, Hong-bin Cao3
1.Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic System, Chinese Academy of Sciences, Beijing 100190, China;2.Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;3.Eoplly New Energy Technology Co., Ltd., Nantong 226602, China
Abstract:
Currently, a conventional two-step method has been used to generate black silicon (BS) surfaces on silicon substrates for solar cell manufacturing. However, the performances of the solar cell made with such surface generation method are poor, because of the high surface recombination caused by deep etching in the conventional surface generation method for BS. In this work, a modified wet chemical etching solution with additives was developed. A homogeneous BS layer with random porous structure was obtained from the modified solution in only one step at room temperature. The BS layer had low reflectivity and shallow etching depth. The additive in the etch solution performs the function of pH-modulation. After 16-min etching, the etching depth in the samples was approximately 200 nm, and the spectrum-weighted-reflectivity in the range from 300 nm to 1200 nm was below 5%. BS solar cells were fabricated in the production line. The decreased etching depth can improve the electrical performance of solar cells because of the decrease in surface recombination. An efficiency of 15.63% for the modified etching BS solar cells was achieved on a large area, p-type single crystalline silicon substrate with a 624.32-mV open circuit voltage and a 77.88% fill factor.
Key words:  Modified etching solution, Black silicon surface, Shallower etching depth, Black silicon solar cell
FundProject:
附件
太阳电池中新腐蚀液实现纳米黑硅表面的一步腐蚀制备
汤叶华1,2, 周春兰1, 周肃1,2, 赵彦1,2, 王文静*1, 费建明3, 曹红彬3
1.中国科学院电工研究所,中国科学院太阳能热利用及光伏系统重点实验室,北京100190;2.中国科学院研究生院,北京 100049;3.欧贝黎新能源科技股份有限公司,南通226602
摘要:
通过引入添加剂,调节腐蚀溶液的pH值,实现了一步法制备黑硅表面. 在取得低表面反射率的同时,减小了黑硅层的腐蚀深度,对于16 min腐蚀的黑硅层,其表面加权平均反射率可达5%(300~1200 nm),但腐蚀深仅约为200 nm. 减小腐蚀深度能够降低黑硅太阳电池的表面复合速率,从而提高太阳电池性能,尤其是开路电压及填充因子. 以新腐蚀液制备的黑硅为衬底,在常规太阳电池产线上制备大面积p-Si黑硅太阳电池,实现了15.63%的转换效率,具有高的开路电压(624.32 mV)和填充因子(77.88%),改进了大面积黑硅太阳电池的性能.
关键词:  改良腐蚀液,黑硅表面,浅腐蚀深度,黑硅太阳电池
DOI:10.1063/1674-0068/26/01/102-108
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