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Direct Synthesis of High Purity Silicon Wires by Electrorefining in Molten KF-NaF Eutectic
Xiang-yu Zou,Hong-wei Xie*,Yu-chun Zhai,Xiao-chuan Lang
Author NameAffiliationE-mail
Xiang-yu Zou School of Materials and Metallurgy, Northeastern University, Shenyang 110189, China  
Hong-wei Xie* School of Materials and Metallurgy, Northeastern University, Shenyang 110189, China xiehw@smm.neu.edu.cn 
Yu-chun Zhai School of Materials and Metallurgy, Northeastern University, Shenyang 110189, China  
Xiao-chuan Lang School of Materials and Metallurgy, Northeastern University, Shenyang 110189, China  
Abstract:
The electrochemical synthesis silicon wires by electrorefining metallurgical grade silicon in thermally dried and pre-electrolyzed molten KF-NaF eutectic were studied at temperatures 800-900 oC using cyclic voltammetry and ac impedance. One oxidation peak at -0.14 V could be attributed to the reaction of Si to Si4+. A cathodic peak occurred at -0.56 V in the cyclic voltammogram and one response semicircle in the ac impedance spectrum was observed, supporting a one-step electrochemical reduction process of Si4+→Si. The electrochemical reaction of silicon was controlled by the diffusion process. The purity of electrorefined silicon wires was up to 99.999% by ICP-MS analysis.
Key words:  Silicon wire, Electrorefining, Cyclic voltammetry, ac impedance
FundProject:
KF-NaF熔盐中电解精炼制备高纯硅线
邹祥宇,谢宏伟*,翟玉春,郎晓川
摘要:
在NaF-KF混合共晶熔盐中电解精炼冶金级硅制备高纯硅线.采用循环伏安和交流阻抗法对预电解后的NaF-KF混合共晶熔盐及硅电极过程进行研究. 在循环伏安曲线-0.14 V位置上发现一个氧化峰,说明阳极过程为Si→Si4+;在循环伏安曲线-0.56 V处只发现一个还原峰,交流阻抗谱中也只有一个响应半圆与之对应,说明阴极的电极过程都为一步电荷转移过程,即为Si4+→Si. 电化学反应过程为扩散过程控制. 制备出的硅线纯度达到99.999%.
关键词:  硅线,电解精炼,循环伏安,交流阻抗谱
DOI:10.1063/1674-0068/26/01/88-94
分类号: