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Growth and Electronic Properties of Ag Nanoparticles on Reduced CeO2-x(111) Films
Dan-dan Kong,Yong-he Pan,Guo-dong Wang,Hai-bin Pan,Jun-fa Zhu*
Author NameAffiliationE-mail
Dan-dan Kong National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China  
Yong-he Pan National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China  
Guo-dong Wang National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China  
Hai-bin Pan National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China  
Jun-fa Zhu* National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China jfzhu@ustc.edu.cn 
Abstract:
Ag nanoparticles grown on reduced CeO2-x thin films have been studied by X-ray photoelec-tron spectroscopy and resonant photoelectron spectroscopy of the valence band to understand the effect of oxygen vacancies in the CeO2-x thin films on the growth and interfacial elec-tronic properties of Ag. Ag grows as three-dimensional particles on the CeO2-x(111) surface at 300 K. Compared to the fully oxidized ceria substrate surface, Ag favors the growth of smaller particles with a larger particle density on the reduced ceria substrate surface, which can be attributed to the nucleation of Ag on oxygen vacancies. The binding energy of Ag3d increases when the Ag particle size decreases, which is mainly attributed to the final-state screening. The interfacial interaction between Ag and CeO2-x(111) is weak. The resonant enhancement of the 4f level of Ce3+ species in RPES indicates a partial Ce4+→Ce3+ re-duction after Ag deposited on reduced ceria surface. The sintering temperature of Ag on CeO1.85(111) surface during annealing is a little higher than that of Ag on CeO2(111) surface, indicating that Ag nanoparticles are more stable on the reduced ceria surface.
Key words:  Silver, Ceria, Growth, Electronic structure, X-ray photoelectron spectroscopy, Resonant photoelectron spectroscopy
FundProject:
Ag在CeO2-x(111)薄膜上的生长与电子结构
孔丹丹,潘永和,王国栋,潘海斌,朱俊发*
摘要:
利用XPS和RPES技术研究了CeO2-x(111)薄膜表面上的氧空位对Ag纳米颗粒的生长和电子结构的影响. XPS结果表明,室温下,Ag纳米颗粒在部分还原的CeO2-x(111)薄膜上呈三维岛状生长, 并且岛密度比完全氧化的CeO2(111)薄膜表面上的大, 说明氧空位可以作为Ag纳米粒子生长的中心. Ag3d5/2芯能级的结合能随着Ag颗粒尺寸的减小而增大, 主要来源于终态效应的贡献. Ag和CeO2-x
关键词:  银,二氧化铈薄膜,生长模式,X射线光电子能谱,共振光电子能谱
DOI:10.1088/1674-0068/25/06/713-718
分类号: