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Influence of Thermal Treatments on In-depth Compositional Uniformity of CuIn(S,Se)2 Thin Films
Hai-bing Xie,Wei-feng Liu*,Guo-shun Jiang,Xin-yi Li,Fei Yan,Chang-fei Zhu*
Author NameAffiliationE-mail
Hai-bing Xie CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China=  
Wei-feng Liu* CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China= liuwf@ustc.edu.cn 
Guo-shun Jiang CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China=  
Xin-yi Li CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China=  
Fei Yan CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China=  
Chang-fei Zhu* CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China= cfzhu@ustc.edu.cn 
Abstract:
CuIn(S,Se)2 thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq-uisite for obtaining device-quality CuIn(S,Se)2 absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn(S,Se)2 thin films, two kinds of reaction temperature profiles were investigated. One process is "one step profile", referring to formation of CuIn(S,Se)2 thin films just at elevated temperature (e.g. 500 oC). The other is "two step profile", which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn(S,Se)2 thin films at higher temperature (e.g. first 250 oC then 500 oC). X-ray diffrac-tion studies reveal that there is a discrepancy in the shape of (112) peak. Samples annealed with "one step profile" have splits on (112) peaks, while samples annealed with "two step profile" have relatively symmetrical (112) peaks. Grazing incident X-ray diffraction and en-ergy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn(S,Se)2 thin films have better in-depth composition uniformity after "two step profile" annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.
Key words:  Thermal treatment, In-depth compositional uniformity, CuIn(S,Se)2 thin film
FundProject:
热处理对CuIn(S,Se)2薄膜断面成分均匀性的影响
谢海兵,刘伟丰*,江国顺,李欣益,严飞,朱长飞*
摘要:
用同时硒硫化共溅射Cu-In预制层的方法制备了CuIn(S,Se)2薄膜.为了了解热处理对CuIn(S,Se)2薄膜断面成分均匀性的影响,对经"一段式"热处理(500 ℃)和"二段式"热处理(250 ℃保温然后500 ℃)的样品进行了研究.XRD测试结果表明,经过"一段式"热处理后的样品XRD(112)峰出现劈裂现象,而经过"二段式"热处理的样品XRD(112)峰比较匀称.GIXRD和EDS测试证明样品经过"二段式"热处理后断面成分均匀性较好.通过XRD 和Raman测试对两种热处理下的反应机理进行了研究,阐述了两种热处理对CuIn(S,Se)2薄膜断面成分均匀性的影响的内在原因.
关键词:  热处理,断面成分均匀性,CuIn(S,Se)2薄膜
DOI:10.1088/1674-0068/25/04/481-486
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