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Room Temperature Ferromagnetism in Ga1-xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films
Ghulam Murtaza Rai*1, Muhammad Azhar Iqbal1, Yong-bing Xu2, Iain Gordon Will2, Qasim Mahmood2
1.Department of Physics, University of the Punjab, Lahore 54590, Pakistan;2.Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK
Abstract:
Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea-surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor-phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper-ties of Ga1-xHoxN(x=0.0, 0.05) films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films (i.e. GaN) exhibited diamagnetic behavior, while the Ho-doped (Ga0.95Ho0.05N) film exhibited a ferro-magnetic behavior.
Key words:  Diluted magnetic semiconductor, Holmium doping, X-ray diffraction, Scan-ning electron microscopy, Room temperature ferromagnetism
FundProject:
室温下Ga1-xHoxN (x=0.0 and 0.05)稀磁半导体薄膜磁性
Ghulam Murtaza Rai*1, Muhammad Azhar Iqbal1, Yong-bing Xu2, Iain Gordon Will2, Qasim Mahmood2
1.巴基斯坦旁遮普大学物理系,拉合尔54590;2.英国约克大学,电子系自旋电子学实验室,约克YO105DD
摘要:
采用热蒸镀技术和后续氨退火制备了Ho掺杂GaN稀磁半导体薄膜. X射线衍射分析表明,所有的峰属于六角纤锌矿结构. 利用扫描电子显微镜和能量色散谱分别进行了表面形貌和成分分析. 用振动样品磁强计在室温测定了Ga1-xHoxN(x=0.0,0.05)的室温铁磁性. 磁性测量结果表明,未掺杂薄膜GaN具有抗磁性行为,而Ho掺杂Ga0.95Ho0.05N的薄膜表现出铁磁行为.
关键词:  稀磁半导体,钬掺杂,X射线衍射仪,扫描电子显微镜,室温铁磁性
DOI:10.1088/1674-0068/25/03/313-317
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