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Room Temperature Ferromagnetism in Ga1-xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films
Ghulam Murtaza Rai*,Muhammad Azhar Iqbal,Yong-bing Xu,Iain Gordon Will,Qasim Mahmood
Author NameAffiliationE-mail
Ghulam Murtaza Rai* Department of Physics, University of the Punjab, Lahore 54590, Pakistan gm_rai786@yahoo.com 
Muhammad Azhar Iqbal Department of Physics, University of the Punjab, Lahore 54590, Pakistan  
Yong-bing Xu Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK  
Iain Gordon Will Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK  
Qasim Mahmood Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK  
Abstract:
Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea-surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor-phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper-ties of Ga1-xHoxN(x=0.0, 0.05) films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films (i.e. GaN) exhibited diamagnetic behavior, while the Ho-doped (Ga0.95Ho0.05N) film exhibited a ferro-magnetic behavior.
Key words:  Diluted magnetic semiconductor, Holmium doping, X-ray diffraction, Scan-ning electron microscopy, Room temperature ferromagnetism
FundProject:
室温下Ga1-xHoxN (x=0.0 and 0.05)稀磁半导体薄膜磁性
Ghulam Murtaza Rai*,Muhammad Azhar Iqbal,Yong-bing Xu,Iain Gordon Will,Qasim Mahmood
摘要:
采用热蒸镀技术和后续氨退火制备了Ho掺杂GaN稀磁半导体薄膜. X射线衍射分析表明,所有的峰属于六角纤锌矿结构. 利用扫描电子显微镜和能量色散谱分别进行了表面形貌和成分分析. 用振动样品磁强计在室温测定了Ga1-xHoxN(x=0.0,0.05)的室温铁磁性. 磁性测量结果表明,未掺杂薄膜GaN具有抗磁性行为,而Ho掺杂Ga0.95Ho0.05N的薄膜表现出铁磁行为.
关键词:  稀磁半导体,钬掺杂,X射线衍射仪,扫描电子显微镜,室温铁磁性
DOI:10.1088/1674-0068/25/03/313-317
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