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Influence of Pressure on SiNx:H Film by LF-PECVD
Zhen-li Wen*,Xiao-ning Cao,Chun-lan Zhou,Wen-jing Wang
Author NameAffiliationE-mail
Zhen-li Wen* Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China jahnwen@hotmail.com 
Xiao-ning Cao Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China  
Chun-lan Zhou Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China  
Wen-jing Wang Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China  
Abstract:
Hydrogenated silicon nitride films as an effective antireflection and passivation coating of silicon solar cell were prepared on p-type polished silicon substrate (1.0 Ωcm) by direct LF-PECVD (low frequency plasma enhanced chemical vapor deposition) of Centrotherm. The preferable passivation effect was obtained and the refractive index was in the range of 2.017-2.082. The refractive index of the hydrogenated silicon nitride films became larger with the increase of the pressure. Fourier transform infrared spectroscopy was used to study the pressure influence on the film structural properties. The results highlighted high hydrogen bond and high Si-N bonds density in the film, which were greatly influenced by the pressure. The passivation effect of the films was influenced by the Si dangling bonds density. Finally the effective minority liftetime degradation with time was shown and discussed by considering the relationship between the structural properties and passivation.
Key words:  SiNx:H thin film, Pressure, Passivation, Structural properties
FundProject:
压强对低频PECVD制备SiNx:H薄膜特性的影响
闻震利*,曹晓宁,周春兰,王文静
摘要:
氢化氮化硅薄膜在晶体硅太阳电池工艺中是一种有效的减反射、钝化薄膜.利用Centrotherm公司的直接法低频PECVD设备在抛光后的p型硅衬底(1.0 Ωcm)表面制作氢化氮化硅,得到了具有较好钝化效果且折射率为2.017~2.082的薄膜.随着压强的增加,薄膜的折射率略有增加.利用傅里叶变换红外光谱技术研究了薄膜中成键结构特性随压强的变化.结果表明沉积压强强烈的影响了H键的浓度和Si-N键的浓度.其中硅的悬挂键浓度是影响薄膜钝化特性的关键因素.最后给出了样品有效少子寿命随时间的衰减特性,并利用成键结构对钝化的影响给出了这种衰减的原因.
关键词:  氮化硅薄膜,压强,钝化,结构特性
DOI:10.1088/1674-0068/25/01/110-114
分类号: