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Influence of Rare Earth Ho3+ Doping on Structural, Microstructure and Magnetic Properties of ZnO Bulk and Thin Film Systems
Ghulam Murtaza Rai*,Muhammad Azhar Iqbal,Yongbing Xu,Iain Gordon Will,Wen Zhang
Author NameAffiliationE-mail
Ghulam Murtaza Rai* Department of Physics, University of the Punjab, Lahore 54590, Pakistan gm_rai786@yahoo.com, Iqbalma@yahoo.com 
Muhammad Azhar Iqbal Department of Physics, University of the Punjab, Lahore 54590, Pakistan  
Yongbing Xu Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK  
Iain Gordon Will Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK  
Wen Zhang Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK  
Abstract:
We have investigated the doping behavior of rare earth element holmium (Ho3+) in ZnO semiconductor. The structural, microstructure, and magnetic properties of Zn1-xHoxO (x=0.0, 0.04, and 0.05) thin films deposited on Si(100) substrate by thermal evaporation technique were studied. The ceramic targets were prepared by conventional solid state ceramic technique. The pallets used as target were final sintered at 900 oC in the presence of N2 atmosphere. The experimental results of X-ray diffraction (XRD) spectra, surface morphology, and magnetic properties show that the Ho3+ doped ZnO thin films has a strong influence on the materials properties. The higher angle shift in peak position and most preferred (101) orientation were observed in XRD pattern. These spectra confirmed the substitution of Ho3+ in ZnO lattice. The surface morphology and stoichiometry for both bulk and thin films were analyzed by scanning electron microscopy and energy dispersive spectroscopy. It was observed that grain size decreases with the increase of Ho3+. Room temperature ferromagnetism was observed for Zn0.95Ho0.05O films. The ferromagnetism might be attributed to the substitution of Ho ions for Zn2+ in ZnO lattices.
Key words:  Diluted magnetic semiconductor, Structural analysis, Scanning electron mi-croscope, Magnetic property
FundProject:
Ho3+掺杂对ZnO薄膜的微观结构和磁性的影响
Ghulam Murtaza Rai*,Muhammad Azhar Iqbal,Yongbing Xu,Iain Gordon Will,Wen Zhang
摘要:
研究Ho3+掺杂对氧化锌半导体材料的微结构和磁学性质影响. 利用热蒸发技术制备了一系列沉积在Si(100)衬底的Zn1-xHoxO(x=0.0、0.04、0.05)薄膜. X射线光谱、表面形貌以及磁性的实验结果表明,Ho3+掺杂对ZnO薄膜材料的性能影响很大. X射线衍射图显示峰位出现高角度转变并且趋向于(101)取向,在ZnO晶格显示Ho3+置换. 扫描电子显微镜和能谱仪对薄膜的表面形貌以及化学
关键词:  稀磁半导体,结构分析,扫描电镜,磁性
DOI:10.1088/1674-0068/24/03/353-357
分类号: