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Synthesis and Characterization of Supported CuInSe2 Nanorod Arrays on Rigid Substrates
Zhong-wei Zhang,Ji Li,Ji-lei Liu,Chang-fei Zhu*
Author NameAffiliationE-mail
Zhong-wei Zhang CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China  
Ji Li CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China  
Ji-lei Liu CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China  
Chang-fei Zhu* CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi- neering, University of Science and Technology of China, Hefei 230026, China cfzhu@ustc.edu.cn 
Abstract:
Copper indium diselenide nanorod arrays were electrodeposited on tungsten/silicon rigid substrates using porous anodic alumina as growth template. The porous anodic alumina templates were prepared by anodizing aluminum films which were sputtered onto the tung-sten/silicon substrates. A selective chemical etching was used to penetrate the barrier layer at the bottom of the alumina channels before electrodeposition, which enables direct elec-trical and chemical contact with the underside substrate electrode. The as-deposited sam-ples were annealed at 450 oC in vacuum. Scanning electron microscopy revealed that the nanorods were dense and compact with diameter of about 100 nm, length of approximate 1 μm, and the aspect ratio of 10. X-ray diffraction, micro-Raman spectroscopy, and high resolution transmission electron microscopy showed that chalcopyrite polycrystalline struc-ture and high purity CuInSe2 nanorods were obtained. The grain size was large in the rod axial direction. Energy-dispersive X-ray spectroscopy showed the composition was nearly stoichiometric. The energy band gap of this nanorod arrays was analyzed by fundamental absorption spectrum and was evaluated to be 0.96 eV.
Key words:  CuInSe2 nanorod, Electrodeposition, Porous alumina template
FundProject:
刚性衬底上铜铟硒纳米棒阵列的合成与表征
张中伟,李纪,刘纪磊,朱长飞*
摘要:
在覆盖有钨电极的硅衬底上利用多孔阳极氧化铝模板为生长掩膜电沉积合成垂直排列的铜铟硒纳米棒阵列. 多孔阳极氧化铝模板由阳极氧化磁控溅射制备的铝膜制成. 扫描电子显微镜结果表明,该纳米棒阵列结构致密,直径约100 nm长度约1μm,纵横比为10. X射线衍射、微区拉曼光谱和高分辨透射电子显微镜结果表明,真空条件下450 oC退火处理的铜铟硒纳米棒是多晶纯相的黄铜矿结构的铜铟硒,在纳米棒轴向方向上有比较大的晶粒尺寸. 能量色散X射线光谱表明,铜铟硒纳米棒的化学组成接近InSe2的化学计量比,由吸收光谱分析推算铜铟硒纳米棒带隙为0.96 eV.
关键词:  铜铟硒纳米棒,电沉积,多孔氧化铝模板
DOI:10.1088/1674-0068/24/01/115-120
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