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Preparation of CuInS2 Thin Film Using Sulfides Nanoparticle Precursor Ink
Wen Wang,Jie Xiong,Chang-fei Zhu,Guo-shun Jiang*
Author NameAffiliationE-mail
Wen Wang CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China gsjiang@ustc.edu.cn 
Jie Xiong CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China gsjiang@ustc.edu.cn 
Chang-fei Zhu CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China gsjiang@ustc.edu.cn 
Guo-shun Jiang* CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engi-neering, University of Science and Technology of China, Hefei 230026, China gsjiang@ustc.edu.cn 
Abstract:
A low cost spin coating route of fabricating CuInS2 polycrystalline thin films by reactive sin-tering method was put forward. The ink for spin coating was optimized by pre-reducing the precursor powders in hydrogen, which turned the nanoparticle precursor powders from mixed sulfides into a mixture of CuInS2 and Cu-In metal alloys. The results of scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and Raman spectra showed that this optimization could highly improve the performance of CuInS2 polycrystalline thin films, including higher packing density, less impurity phases, and better quality. The en-ergy gap of optimized CuInS2 thin film was determined to be about 1.45 eV by absorption spectroscopy measurement.
Key words:  CuInS2 thin film, Nanoparticle, Ink, Spin coating
FundProject:
使用硫化物纳米前驱物墨水法制备铜铟硫薄膜
汪雯,熊洁,朱长飞,江国顺*
摘要:
提出了一种通过反应烧结来制备CuInS2多晶薄膜的低成本旋涂工艺路线.通过将前驱物粉末在氢气中预还原的方法来优化旋涂时使用的墨水成分,氢气还原会使前驱物纳米粉末从硫化物混合粉末转变成CuInS2和Cu-In合金的混合物.扫描电子显微镜、电子能谱、X射线衍射以及拉曼图谱的结果表明,这种优化能极大的提高CuInS2多晶薄膜的性能,其中包括薄膜的排列密度更高,杂质相减少,薄膜质量变得更好等.吸收光谱测得优化后的铜铟硫薄膜的带隙约为1.45 eV.
关键词:  CuInS2薄膜,纳米颗粒,墨水,旋涂法
DOI:10.1088/1674-0068/23/04/465-468
分类号: