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Plasma-assisted MBE of GaN pn-junction Grown on Si(111) Substrate
Mohd Zaki Mohd Yusoff,Zainuriah Hassan,Chin Che Woei,Haslan Abu Hassan
Author NameAffiliationE-mail
Mohd Zaki Mohd Yusoff Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, MalaysiaDepartment of Applied Sciences, Universiti Teknologi MARA, 13500 Permatang Pauh, Penang, Malaysia mzmy83@gmail.com, zai@usm.my 
Zainuriah Hassan Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia mzmy83@gmail.com, zai@usm.my 
Chin Che Woei Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia mzmy83@gmail.com, zai@usm.my 
Haslan Abu Hassan Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia mzmy83@gmail.com, zai@usm.my 
Abstract:
We investigated growth of GaN pn-junction layers grown on silicon(111) by plasma-assisted molecular beam epitaxy system and its application for photo-devices. Si and Mg were used as n- and p-dopants, respectively. The reflection high energy electron diffraction images indicated a good surface morphology of GaN pn-junction layer. The thickness of GaN pn-junctions layers was about 0.705 nm. The absence of cubic phase GaN showed that this layer possessed hexagonal structure. According to XRD symmetric rocking curve ω/2θ scans of (0002) plane at room temperature, the full width at half-maximun of GaN pn-junction sample was calculated as 0.34o, indicating a high quality layer of GaN pn-junction. Surprisingly, there was no quenching of the A1(LO) peak, with the presence of Si- and Mg-dopants in sample. The pn-junctions sample has a good optical quality which was measured by the photoluminescence system. For photo-devices applications, Ni and Al were used as front and back contacts, respectively. The current-voltage characteristics of the devices showed the typical rectifying behavior of heterojunction. The photo-current measurement was performed using a visible-lamp under forward and reverse biases. From the temperature-dependent measurements, the current at low bias exhibited much stronger temperature dependence and weaker field dependence. The effect of thermal annealing on front contact Ni was also carried out. The front contact Ni was annealed at 400 and 600 oC for 10 min in the nitrogen ambient. The results showed that 600 oC treated sample had a higher gain at 1.00 V/e than 400 oC treated and untreated samples.
Key words:  III-nitrides, GaN, pn-junction, Molecular beam epitaxy, Photodetector
FundProject:
等离子辅助分子束外延技术研究生长在Si(111)衬底的氮化镓pn结
M. Z. Mohd Yusoff,Z. Hassan,C. W. Chin,H. AbuHassan
摘要:
利用等离子辅助分子束外延系统研究了生长在硅(111)衬底的氮化镓pn结,并将其应用于光学器件.硅和镁分别用做n和p掺杂,反射高能电子衍射图像显示氮化镓pn结层具有良好的表面形貌,结层厚度约为0.705 nm,且为六方结构.室温下X射线衍射对称摇摆曲线中(0002)面的ω/2θ显示,半峰宽为0.340,说明氮化镓pn结质量高.另外,在硅和镁掺杂样品中没有A1峰淬灭.光致发光光谱表明pn结样品具有良好的光学性能.镍和铝作为分别作为正面和背面的电极接触应用于光学器件,该器件的电流电压特性显示了典型的异质结整流特性.正向接触镍经过氮气中退火处理10 min,结果表明,600 oC处理的样品比400 oC处理和未经处理的样品具有更高的增益.
关键词:  III族氮化物,氮化镓,pn结,分子束外延,光探测器
DOI:10.1088/1674-0068/23/04/431-436
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