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Characterization of CuInS2 Thin Films with Different Cu/In Ratio
Mutlu Kundak??*
Author NameAffiliationE-mail
Mutlu Kundak??* Department of Physics, Science Faculty, Atatürk University, Erzurum, Turkey mutlu.kundakci@gmail.com 
Abstract:
Thin films of CuInS2 were grown on glass substrate by successive ionic layer adsorption and reaction method with different [Cu]/[In] ratios and annealed at 400 °C for 30 min. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In]ratios. The electrical resistivity of CuInS2 of thin films was determined using a direct current-two probe method in the temperature range of 300—470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2.
Key words:  Thin film, Successive ionic layer adsorption, Chalcopyrite compound
FundProject:
不同[Cu]/[In]比例的CuInS2薄膜的特性
Mutlu Kundak??*
摘要:
采用连续离子层吸附与反应方法在玻璃基板上按照不同[Cu]/[In]的比例制备了CuInS2薄膜,并在400 °C退火30 min. 对薄膜的晶体结构和晶粒尺寸用X射线衍射方法进行了表征,原子力显微镜测定薄膜的表面形貌. 研究不同的[Cu]/[In]比例对薄膜光学和电学性能的影响. 采用直流两探针法在300~470 °C测定CuInS2薄膜的电阻率,随着[Cu]/[In]比例的增加,电阻率值越来越低. 溶液中[Cu]/[In]的比例明显影响CuInS2薄膜的结构、电学和光学特性.
关键词:  薄膜,连续离子层吸附与反应方法,黄铜矿类化合物
DOI:10.1088/1674-0068/23/05/582-586
分类号: