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| Abstract: |
| Thin films of CuInS2 were grown on glass substrate by successive ionic layer adsorption and reaction method with different [Cu]/[In] ratios and annealed at 400 °C for 30 min. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In]ratios. The electrical resistivity of CuInS2 of thin films was determined using a direct current-two probe method in the temperature range of 300—470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS2. |
| Key words: Thin film, Successive ionic layer adsorption, Chalcopyrite compound |
| FundProject: |
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| 不同[Cu]/[In]比例的CuInS2薄膜的特性 |
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Mutlu Kundak??*
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| 摘要: |
| 采用连续离子层吸附与反应方法在玻璃基板上按照不同[Cu]/[In]的比例制备了CuInS2薄膜，并在400 °C退火30 min. 对薄膜的晶体结构和晶粒尺寸用X射线衍射方法进行了表征，原子力显微镜测定薄膜的表面形貌. 研究不同的[Cu]/[In]比例对薄膜光学和电学性能的影响. 采用直流两探针法在300～470 °C测定CuInS2薄膜的电阻率，随着[Cu]/[In]比例的增加，电阻率值越来越低. 溶液中[Cu]/[In]的比例明显影响CuInS2薄膜的结构、电学和光学特性. |
| 关键词: 薄膜，连续离子层吸附与反应方法，黄铜矿类化合物 |
| DOI：10.1088/1674-0068/23/05/582-586 |
| 分类号: |